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Georgia Tech's Institutional Repository >
Browsing by Subject "Gallium nitride"
Showing results 1 to 15 of 15
| Issue Date | Title | Author(s) | Type | 8-Jul-2008 | Analysis of thermal conductivity models with an extension to complex crystalline materials | Greenstein, Abraham; Mechanical Engineering | Dissertation |
1-Dec-2003 | Development of thin film photodetectors and their applications: multispectral detection and high speed optical interconnections | Seo, Sang-Woo; Electrical and Computer Engineering | Dissertation |
25-Jun-2008 | Engineering Considerations in Design of High Temperature Electronics for Planetary Probes | Boeing Company; Hughes Research Laboratories; Hussain, T.; Andrews, T.; Rubin, S.; Frampton, R.; Peltz, Leora | Proceedings |
Dec-2002 | The epitaxial growth of GaN and A1GaN/GaN Heterostructure Field Effect Transistors (HFET) on Lithium Gallate (LiGaOâ‚‚) substrates | Kang, Sangbeom; Electrical and computer engineering | Dissertation |
9-Jul-2007 | Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition | Yoo, Dongwon; Materials Science and Engineering | Dissertation |
18-Aug-2004 | High-Performance AIGaN and GaN Power Electronic Devices | Georgia Institute of Technology. Office of Sponsored Programs; Georgia Institute of Technology. School of Electrical and Computer Engineering; Dupuis, Russell | Technical Report |
2-Jan-2009 | Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications | Lee, Kyoung-Keun; Electrical and Computer Engineering | Dissertation |
18-Jun-2007 | Improved understanding and control of Mg-doped GaN by plasma assisted molecular beam epitaxy | Burnham, Shawn David; Electrical and Computer Engineering | Dissertation |
17-Nov-2008 | Metrology of gan electronics using micro-raman spectroscopy | Beechem, Thomas E., III; Mechanical Engineering | Dissertation |
Aug-2003 | Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications :
impact of nucleation kinetics on material and device structure quality | Namkoong, Gon; Electrical and Computer Engineering | Dissertation |
May-1996 | Monte Carlo simulations of electron transport in bulk gallium nitride | Kolnik, Jan; Electric engineering; Electrical and computer engineering | Dissertation |
8-Jun-2004 | Novel High Efficiency Photovoltaic Devices Based on the III-N Material System | Georgia Institute of Technology. Office of Sponsored Programs; Georgia Institute of Technology. School of Electrical and Computer Engineering; Doolittle, Alan | Technical Report |
29-Nov-2006 | A Novel Solid State General Illumination Source | Nicol, David Brackin; Electrical and Computer Engineering | Dissertation |
May-2007 | Ohmic Contacts for Wide Bandgap Devices | Mehra, Zen; Electrical and Computer Engineering | Undergraduate Thesis |
May-1999 | Substrate preparation for the growth of gallium nitride semiconductors by molecular beam epitaxy | Kropewnicki, Thomas Joseph; Chemical Engineering | Dissertation |
Showing results 1 to 15 of 15
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