http://smartech.gatech.edu/handle/1853/10762 Search the Channel search http://smartech.gatech.edu/simple-search http://smartech.gatech.edu/handle/1853/30620 Title: Near Void-Free Assembly Development of Flip Chip Using No-Flow Underfill <br/> <br/>Authors: Lee, Sangil; Yim, Myung Jin; Master, Raj N.; Wong, C. P.; Baldwin, Daniel F. <br/> <br/>Abstract: The advanced flip-chip-in-package (FCIP) process technology, using no-flow underfill material for high I/O density (over 3000 I/O) and fine-pitch (down to 150 μm) interconnect applications, presents challenges for flip chip processing because underfill void formation during reflow drives interconnect yield down and degrades reliability. In spite of such challenges, a high yield, reliable assembly process (> 99.99%) has been achieved using commercial no-flow underfill material with a high I/O, fine-pitch FCIP. This has been obtained using design of experiments with physical interpretation techniques. Statistical analysis determined what assembly conditions should be used in order to achieve robust interconnects without disrupting the FCIP interconnect structure. However, the resulting high yield process had the side effect of causing a large number of voids in the FCIP assemblies. Parametric studies were conducted to develop assembly process conditions that would minimize the number of voids in the FCIP induced by thermal effects. This work has resulted in a significant reduction in the number of underfill voids. This paper presents systematic studies into yield characterization, void formation characterization, and void reduction through the use of structured experimentation which was designed to improve assembly yield and to minimize the number of voids, respectively, in FCIP assemblies. <br/> <br/>Description: © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or distribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.; DOI: 10.1109/TEPM.2009.2015592 Sun, 29 Mar 2009 22:58:59 GMT http://smartech.gatech.edu/handle/1853/30603 Title: Novel Nano-Scale Conductive Films With Enhanced Electrical Performance and Reliability for High Performance Fine Pitch Interconnect <br/> <br/>Authors: Li, Yi; Yim, Myung Jin; Moon, Kyoung Sik; Wong, C. P. <br/> <br/>Abstract: In this paper, a novel nano-scale conductive film which combines the advantages of both traditional anisotropic conductive adhesives/films (ACAs/ACFs) and nonconductive adhesives/films (NCAs/NCFs) is introduced for next generation high-performance ultra-fine pitch packaging applications. This novel interconnect film possesses the properties of electrical conduction along the z direction with relatively low bonding pressure (ACF-like) and the ultra-fine pitch (< 30 μm) capability (NCF-like). The nano-scale conductive film also allows a lower bonding pressure than NCF to achieve a much lower joint resistance (over two orders of magnitude lower than typical ACF joints) and higher current carrying capability. With low temperature sintering of nano-silver fillers, the joint resistance of the nano-scale conductive film was as low as 10―5 Ohm. The reliability of the nano-scale conductive film after high temperature and humidity test (85°C/85% RH) was also improved compared to the NCF joints. The insertion loss of nano-scale conductive film joints up to 10 GHz was almost the same as that of the standard ACF or NCF joints, suggesting that the nano-scale conductive film is suitable for reliable high-frequency adhesive joints in microelectronics packaging. <br/> <br/>Description: © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or distribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.; DOI: 10.1109/TCAPT.2009.2012720 Thu, 29 Jan 2009 22:58:59 GMT http://smartech.gatech.edu/handle/1853/30602 Title: Enhanced Electrical Properties of Anisotropic Conductive Adhesive With $pi$ -Conjugated Self-Assembled Molecular Wire Junctions <br/> <br/>Authors: Zhang, Rongwei; Li, Yi; Yim, Myung Jin; Moon, Kyoung Sik; Lu, Daoqiang Daniel; Wong, C. P. <br/> <br/>Abstract: We have investigated the electrical properties of anisotropic conductive adhesive (ACA) joint using submicrometer- sized ( 500 nm in diameter) silver (Ag) particle as conductive filler with the effect of -conjugated self-assembled molecular wires. The ACAs with submicrometer-sized Ag particles have higher current carrying capability ( 3400 mA) than those with micro-sized Au-coated polymer particles ( 2000 mA) and Ag nanoparticles ( 2500 mA). More importantly, by construction of -conjugated self-assembled molecular wire junctions between conductive particles and integrated circuit (IC)/substrate, the electrical conductivity has increased by one order of magnitude and the current carrying capability of ACAs has improved by 600 mA. The crucial factors that govern the improved electrical properties are discussed based on the study of alignments and thermal stability of molecules on the submicrometer-sized Ag particle surface with surface-enhanced Raman spectroscopy (SERS), providing a fundamental understanding of conduction mechanism in ACA joints and guidelines for the formulation of high-performance ACAs in electronic packaging industry. <br/> <br/>Description: © 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or distribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.; DOI: 10.1109/TCAPT.2009.2012720 Sat, 29 Aug 2009 22:58:59 GMT http://smartech.gatech.edu/handle/1853/27874 Title: Monolayer protection for eletrochemical migration control in silver nanocomposite <br/> <br/>Authors: Li, Yi; Wong, C. P. <br/> <br/>Abstract: The authors introduced an effective approach of using monolayer-protected silver nanoparticles to reduce silver migration for electronic device interconnect applications. Formation of surface complex between the carboxylate anion and surface silver ion reduces the solubility and diffusivity significantly of migration components and therefore contributes to effective migration control. A fundamental understanding of the mechanism of silver migration control was conducted by studying the current-voltage relationships of the nanocomposites with a migration model. The control of silver migration enables the application of the silver composites in fine pitch and high performance electronic device interconnects. <br/> <br/>Description: ©2006 American Institute of Physics. The electronic version of this article is the complete one and can be found online at: http://link.aip.org/link/?APPLAB/89/112112/1; DOI:10.1063/1.2353813 Mon, 11 Sep 2006 22:58:59 GMT