Quantum model of the modulation doped field effect transistor

Please use this identifier to cite or link to this item: http://hdl.handle.net/1853/13355

Title:	Quantum model of the modulation doped field effect transistor
Author:	Wiederspahn, H. Lee
Type:	Dissertation
URI:	http://hdl.handle.net/1853/13355
Date:	1992-05
Publisher:	Georgia Institute of Technology
Subject:	Field-effect transistors Modulation-doped field-effect transistors Wave mechanics
Department:	Electrical Engineering
Advisor:	John P. Uyemura
Degree:	Ph.D.

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Georgia Tech Theses and Dissertations [17727]
School of Electrical and Computer Engineering Theses and Dissertations [2289]

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