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dc.contributor.authorPark, Duke H.en_US
dc.date.accessioned2007-03-27T13:27:07Z
dc.date.available2007-03-27T13:27:07Z
dc.date.issued1989-12en_US
dc.identifier.urihttp://hdl.handle.net/1853/13744
dc.format.extent236 bytes
dc.format.mimetypetext/html
dc.language.isoen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.rightsAccess restricted to authorized Georgia Tech users only.en_US
dc.subject.lcshElectron mobilityen_US
dc.subject.lcshSemiconductorsen_US
dc.titleTheoretical studies of submicron gate length high electron mobility transistorsen_US
dc.typeDissertationen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentElectric Engineeringen_US
dc.description.advisorK. F. Brennanen_US
dc.identifier.bibid330731en_US


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