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    Subtractive Etching of Cu with Hydrogen-Based Plasmas 

    Levitin, Galit (Georgia Institute of Technology, 2011-02-22)
    Beginning at the 130 nm node, copper (Cu) interconnection layers were introduced to replace conventional Al layers in order to reduce the wiring resistance in logic devices. Due to the inability to form volatile etch ...

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    AuthorLevitin, Galit (1)Subject
    Fabrication (1)
    Interconnects (1)
    Nanostructures (1)
    Nanotechnology (1)... View MoreDate Issued2011 (1)Has File(s)
    Yes (1)
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