• Etching 3D nanostructures in Silicon using Metal-assisted Chemical Etching 

      Hildreth, Owen (Georgia Institute of Technology, 2011-04-12)
      Metal-assisted Chemical Etching (MaCE) of silicon is a new method to fabricate complex 1D, 2D and 3D silicon nanostructures. In this process, silicon etching is confined to a small region surrounding metal catalyst ...
    • Fabrication of TiO2 Nano-fiber Meshes by Electrospinning and Evaluation of their Potential for Bone Applications 

      Gittens Ibacache, Rolando Arturo (Georgia Institute of Technology, 2011-04-12)
      Ideal outcomes in the field of tissue engineering and regenerative medicine involve biomaterials that can enhance cell differentiation and tissue repair without the use of systemic drugs. Tissue engineering biomaterials ...
    • Focused Electron Beam Induced Deposition (FEBID) - A New Tool for 3-D Nanomanufacturing 

      Fedorov, Andrei (Georgia Institute of Technology, 2011-01-25)
      In FEBID a tightly-focused, high-energy electron beam impinges on a substrate and, upon collision interactions, producing lower energy back-scattered (BSE) primary electrons and secondary electrons (SE). Concurrently, the ...
    • III-V Nitride Based Micro and Nanoscale Sensors 

      Koley, Goutam (Georgia Institute of Technology, 2011-03-08)
      Structural, mechanical, and sensing properties of InN nanowires (NWs) grown by chemical vapor deposition process have been investigated for their applications in nanoscale sensors. It has been observed that the NWs bend ...
    • Ink-jet Deposition for Direct Write Patterning 

      Gottfried, David (Georgia Institute of Technology, 2012-11-27)
      Deposition of micrometer scale fluid materials on surfaces with controlled volume, area, and position accuracy is a common need for development and application of many microelectronics, MEMS, and optical devices. While ...
    • Subtractive Etching of Cu with Hydrogen-Based Plasmas 

      Levitin, Galit (Georgia Institute of Technology, 2011-02-22)
      Beginning at the 130 nm node, copper (Cu) interconnection layers were introduced to replace conventional Al layers in order to reduce the wiring resistance in logic devices. Due to the inability to form volatile etch ...