Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications : impact of nucleation kinetics on material and device structure quality

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Title: Molecular beam epitaxy grown III-nitride materials for high-power and high-temperture applications : impact of nucleation kinetics on material and device structure quality
Author: Namkoong, Gon
Type: Dissertation
URI: http://hdl.handle.net/1853/16426
Date: 2003-08
Publisher: Georgia Institute of Technology
Subject: Bipolar transistors Surfaces
Epitaxial growth
Gallium nitride
Department: Electrical and Computer Engineering
Advisor: April S. Brown
Degree: Ph.D.

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