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dc.contributor.authorDoolittle, William Alanen_US
dc.date.accessioned2008-01-25T15:49:47Z
dc.date.available2008-01-25T15:49:47Z
dc.date.issued2004-06-08en_US
dc.identifier.other9114en_US
dc.identifier.urihttp://hdl.handle.net/1853/19363
dc.descriptionIssued as final reporten_US
dc.publisherGeorgia Institute of Technologyen_US
dc.relation.ispartofseriesSchool of Electrical and Computer Engineering ; Project no. E-21-6THen_US
dc.subject.lcshPhotovoltaic cells
dc.subject.lcshSolar cells
dc.subject.lcshNitrides
dc.subject.lcshGallium nitride
dc.titleNovel High Efficiency Photovoltaic Devices Based on the III-N Material Systemen_US
dc.typeTechnical Reporteng_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineeringen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Office of Sponsored Programs
dc.contributor.corporatenameGeorgia Institute of Technology. Office of Sponsored Programs


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