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dc.contributor.authorDai, Zhentingen_US
dc.date.accessioned2008-02-07T18:51:01Z
dc.date.available2008-02-07T18:51:01Z
dc.date.issued2006-11-15en_US
dc.identifier.urihttp://hdl.handle.net/1853/19880
dc.description.abstractThin-film niobium mechanically controlled break junctions and resistively shunted niobium mechanically-controlled break junctions were developed and successfully microfabricated. Using these devices, high-stability atomic size contacts were routinely produced and investigated both in the normal and superconducting states. Investigations of the two-level conductance fluctuations in the smallest contacts allowed the calculation of their specific atomic structure. Embedding resistive shunts close to the superconducting atomic-sized junctions affected the coherence of the electronic transport. Finally, point contact spectroscopy measurements provide evidence of the interaction of conduction electrons with the mechanical degrees of freedom of the atomic-size niobium contacts.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectAtomic-size contactsen_US
dc.subjectMechanically controlled break junctionen_US
dc.subjectQuantum point contacten_US
dc.subjectAndreev reflectionen_US
dc.subject.lcshMolecular electronics
dc.subject.lcshNiobium
dc.subject.lcshSuperconductors
dc.titleCoherent and Dissipative Transport in Metallic Atomic-Size Contactsen_US
dc.typeDissertationen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentPhysicsen_US
dc.description.advisorCommittee Chair: Marchenkov, Alexei; Committee Member: de Heer, Walter A.; Committee Member: Fedorov, Andrei G.; Committee Member: First, Phillip; Committee Member: Gole, James L.en_US


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