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dc.contributor.authorWang, Yongqianen_US
dc.date.accessioned2008-02-28T14:18:36Z
dc.date.available2008-02-28T14:18:36Z
dc.date.issued2002-05en_US
dc.identifier.urihttp://hdl.handle.net/1853/20192
dc.publisherGeorgia Institute of Technologyen_US
dc.rightsAccess restricted to authorized Georgia Tech users only.en_US
dc.subject.lcshHeterostructuresen_US
dc.subject.lcshAtomic structureen_US
dc.subject.lcshSemiconductors Characterizationen_US
dc.titleNanometer characterization of quantum compound semiconductor heterostructures grown by molecular beam epitaxyen_US
dc.typeDissertationen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentMaterials science and engineeringen_US
dc.description.advisorZhong Lin Wangen_US
dc.identifier.bibid629353en_US


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