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dc.contributor.authorLi, Xuebinen_US
dc.date.accessioned2008-09-17T19:28:47Z
dc.date.available2008-09-17T19:28:47Z
dc.date.issued2008-05-13en_US
dc.identifier.urihttp://hdl.handle.net/1853/24670
dc.description.abstractGraphene is a single sheet of graphite. While bulk graphite is semimetal, graphene is a zero bandgap semiconductor. Band structure calculations show graphene has a linear energy dispersion relation in the low energy region close to the Dirac points where the conduction band and the valence band touch. Carriers in graphene are described as massless Dirac fermions in contrast to massive carriers in normal metals and semiconductors that obey a parabolic energy dispersion relation. The uniqueness of graphene band structure indicates its peculiar electronic transport properties. In this thesis work, single- and multi-layer graphene films epitaxially grow on either the Si face or the C face of SiC substrates in a homemade induction vacuum chamber by thermal decomposition of SiC at high temperatures. The surface morphology and crystal structure of epitaxial graphene are studied with surface analysis tools. The transport properties of epitaxial graphene are studied by magnetotransport experiments. An epitaxial graphene film turns out to be a multilayered graphene because carriers in epitaxial graphene act as those in single layer graphene. Top gated and side gated epitaxial graphene field effect transistors (FETs) have also been successfully fabricated. These systematic studies unambiguously demonstrate the high quality of epitaxial graphene and the great potential of epitaxial graphene for electronic applicationsen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectGrapheneen_US
dc.subjectEpitaxial grapheneen_US
dc.subjectGraphene-based electronicsen_US
dc.subjectSiCen_US
dc.subjectFilm growthen_US
dc.subjectTransporten_US
dc.subject.lcshGraphite
dc.subject.lcshEpitaxy
dc.subject.lcshIntegrated circuits
dc.subject.lcshSilicon-carbide thin films
dc.titleEpitaxial graphene films on SiC: growth, characterization, and devicesen_US
dc.typeDissertationen_US
dc.description.degreePh.D.en_US
dc.contributor.departmentPhysicsen_US
dc.description.advisorCommittee Chair: de Heer, Walter; Committee Member: Chou, Mei-Yin; Committee Member: First, Phillip; Committee Member: Meindl, James; Committee Member: Orlando, Thomasen_US


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