Browsing University Center of Excellence for Photovoltaics Conference Papers by Issue Date
Now showing items 1-20 of 59
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Self-Doping Contacts and Associated Silicon Solar Cell Structures
(Georgia Institute of Technology, 1998-07)Contacts to <111> Si which are self-doping and self-aligning were investigated. Such contacts are applicable both to conventional cell structures as selective emitters and to more demanding structures such as interdigitated ... -
Comparison of Front and Back Surface Passivation Schemes for Silicon Solar Cells
(Georgia Institute of Technology, 1998-07)This work presents a comprehensive study on fast, low-cost methods for the electronic passivation of the phosphorus-diffused front surface and the non-diffused p-type rear surface of crystalline Si solar cells. Titanium ... -
Determining the Sufficiency of Standard Protective Relaying for Islanding Prevention in Grid-Connected PV Systems
(Georgia Institute of Technology, 1998-07)Recently there has been a resurgence of concern about islanding of grid-connected photovoltaic (PV) systems. This condition occurs when the PV system continues to energize a section of the grid after that section has been ... -
Effective Passivation of the Low Resistivity Silicon Surface by a Rapid Thermal Oxide/PECVD Silicon Nitride Stack and Its Application to Passivated Rear and Bifacial Si Solar Cells
(Georgia Institute of Technology, 1998-07)A novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thermal SiO(2) (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 em/s at the 1.3 ... -
Development of RIE-Textured Silicon Solar Cells
(Georgia Institute of Technology, 2000-09)A maskless plasma texturing technique using Reactive Ion Etching for silicon solar cells results in a very low reflectance of 5.4 % before and 3.9 % after SiN deposition. A detailed study of surface recombination and ... -
Lifetime Enhancement in EFG Multicrystalline Silicon
(Georgia Institute of Technology, 2000-09)P and AI gettering and SiN-induced hydrogenation of EFG Si have been investigated using manufacturable process techniques. Annealing of SiN coated EFG, without AI on the back, shows very little defect passivation with maximum ... -
PECVD SiN(x) Induced Hydrogen Passivation in String Ribbon Silicon
(Georgia Institute of Technology, 2000-09)To improve the bulk minority carrier lifetime in String Ribbon silicon, SiN(x) induced defect passivation during a post deposition anneal is investigated. Our results indicate that SiN(x) induced hydrogen passivation is ... -
Rapid Photo-Assisted Forming Gas Anneal (FGA) for High Quality Screen-Printed Contacts for Silicon Solar Cells
(Georgia Institute of Technology, 2000-09)Formation of low-cost high-quality contacts is the key to cost-effective silicon solar cells. Screen-printing is widely used in Industry because it is simple, low-cost and rapid. However, cost and throughput gains are ... -
Novel Processing of Solar Cells with Porous Silicon Texturing
(Georgia Institute of Technology, 2000-09)A simple porous silicon texturing technique that is applicable to various kinds of silicon material, including multicrystalline and ribbon Si, of any doping type and level is used to fabricate solar cells. Acidic etching ... -
RIE-Texturing of Multicrystalline Silicon Solar Cells
(Georgia Institute of Technology, 2001-06)We developed a maskless plasma texturing technique for multicrystalline silicon (mc-Si) cells using Reactive Ion Etching (RIE) that results in higher cell performance than that of standard untextured cells. Elimination of ... -
Fundamental Understanding and Implementation of Al-enhanced PECVD SiN(x) Hydrogenation in Silicon Ribbons
(Georgia Institute of Technology, 2001-06)A low-cost, manufacturable defect gettering and passivation treatment, involving simultaneous anneal of a PECVD SiN(x) film and a screen-printed Al layer, is found to improve the lifetime in Si ribbon materials from 1-10 ... -
Rapid Thermal Technologies for High Efficiency Silicon Solar Cells
(Georgia Institute of Technology, 2001-06)This paper shows that rapidly formed emitters (≤ 6 min) in a conveyor belt furnace or 3 minutes in an RTP system, in conjunction with a screen-printed (SP) RTP Al-BSF and passivating oxide formed simultaneously in 2 minutes ... -
Light Induced Degradation in Manufacturable Multi-crystalline Silicon Solar Cells
(Georgia Institute of Technology, 2001-08)Traditional Czochralski grown Si solar cells are known to suffer from light induced degradation (LID) which adversely affects the minority carrier lifetime. Multi-crystalline Si has also been shown to show a similar ... -
Guidelines for More Accurate Determination and Interpretation of Effective Lifetime from Measured Quasi-Steady-State Photoconductance
(Georgia Institute of Technology, 2001-08) -
Lifetime Enhancement During Processing of Porous Silicon Cells
(Georgia Institute of Technology, 2001-08)Porous silicon (PS) induced lifetime enhancement was investigated in dendritic web and string ribbon silicon. As-grown lifetime in web was <1 µs, which improved by a factor of 3.27 due to 860 degrees C/2 min heat treatment. ... -
Lifetime Enhancement and Low-Cost Technology Development for High-Efficiency Manufacturable Silicon Solar Cells
(Georgia Institute of Technology, 2001-08)A low-cost, manufacturable defect gettering and passivation treatment, involving simultaneous anneal of a PECVD SiN(x) film and a screen-printed Al layer, is found to improve the lifetime in Si ribbon materials from 1-10 ... -
Self-Aligned Self-Doping Selective Emitter for Screen-Printed Silicon Solar Cells
(Georgia Institute of Technology, 2001-10)A self-aligned selective emitter for screen-printed solar cells is described in which phosphorus dopant is incorporated into a silver paste and diffused into the silicon. This produces an ohmic contact on 70-100 Ω/ emitter ... -
Screen-Printed Back Surface Reflector for Light Trapping in Crystalline Silicon Solar Cells
(Georgia Institute of Technology, 2001-10)Evaporated metal back surface reflectors have been shown to yield high values of internal rear reflectance, and are particularly eff ective when combined with a thin dielectric layer between the silicon and the metal. ... -
Estimation of PV System Reliability Parameters
(Georgia Institute of Technology, 2001-10)In evaluating the payback time and energy price per kWh generated by a renewable energy system, the system is usually assumed to work without interruptions over its entire life. Renewable energy systems are fairly reliable, ... -
A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits
(Georgia Institute of Technology, 2001-10)Solar cells efficiency limits can be calculated either by thermodynamic or detailed balance approaches. For a single energy (i.e., single junction) solar cell, detailed balance equations are identical to the thermodynamic ...