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dc.contributor.authorNakayashiki, Kenta
dc.contributor.authorRohatgi, Ajeet
dc.contributor.authorTarasov, Igor
dc.contributor.authorOstapenko, Sergei
dc.contributor.authorGedvilas, Lynn
dc.contributor.authorKeyes, Brian
dc.contributor.authorBathey, Bala R.
dc.contributor.authorKalejs, Juris P.
dc.date.accessioned2008-12-10T16:59:03Z
dc.date.available2008-12-10T16:59:03Z
dc.date.issued2005-01
dc.identifier.urihttp://hdl.handle.net/1853/25938
dc.descriptionPresented at the 31st IEEE Photovoltaic Specialists Conference, Orlando, Florida; January 3-7, 2005. ©2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en
dc.description.abstractThis paper shows that both hydrogenation of defects from SiN(x) coating and thermally-induced dehydrogenation of defects are rapid and occur simultaneously in EFG Si during cell processing. Room-temperature scanning photoluminescence mappings, before and after the SiN(x) induced hydrogenation, revealed that hydrogenation of defective regions is effective and pronounced, with more than an order of magnitude increase in lifetime, compared to the rest of the bulk. In addition, FTIR measurements showed the concentration of bonded hydrogen in the SiN(x) film decreases with the increase in annealing temperature and time. However, the rate of release of hydrogen from the SiN(x) film decreases sharply after the first few seconds. Based on this understanding, a process was developed for a co-firing of SiN(x) film and screen-printed Al and Ag in RTP unit, which produced 4 cm(2) EFG Si cell with highest efficiency of 16.1%.en
dc.language.isoen_USen
dc.publisherGeorgia Institute of Technologyen
dc.subjectPhotoluminescence mappingen
dc.subjectSolar cellsen
dc.subjectCell processingen
dc.titleInvestigation of Spatially Non-Uniform Defect Passivation in EFG Si by Scanning Photoluminescence Techniqueen
dc.typeProceedingsen
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineering
dc.contributor.corporatenameUniversity of South Florida. Nanomaterials and Nanomanufacturing Research Center
dc.contributor.corporatenameNational Renewable Energy Laboratory (U.S.)
dc.contributor.corporatenameRWE Schott Solar, Inc.
dc.contributor.corporatenameGeorgia Institute of Technology. University Center of Excellence for Photovoltaic Research and Education


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