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dc.contributor.authorRohatgi, Ajeet
dc.contributor.authorNarasimha, S.
dc.contributor.authorRuby, D. S.
dc.date.accessioned2008-12-17T21:11:47Z
dc.date.available2008-12-17T21:11:47Z
dc.date.issued1998-07
dc.identifier.urihttp://hdl.handle.net/1853/26204
dc.descriptionPresented at the 2nd World Conference on Photovoltaic Solar Energy Conversion; Vienna, Austria; July 6-10, 1998.en
dc.description.abstractA novel stack passivation scheme, in which plasma silicon nitride (SiN) is stacked on top of a rapid thermal SiO(2) (RTO) layer, is developed to attain a surface recombination velocity (S) approaching 10 em/s at the 1.3 Ω-cm p-type (l00) silicon surface. Such low S is achieved by the stack even when the RTO and SiN films individually yield considerably poorer surface passivation. Critical to achieving low S by the stack is the use of a short, moderae temperature anneal (in this study 730°C for 30 seconds) after film growth and deposition. This anneal is believed to enhance the release and delivery of atomic hydrogen from the SiN film to the Si-Si0(2) interface, thereby reducing the density of interface traps at the surface. Compatibility with this post-deposition anneal makes the stack passivation scheme attractive for cost-effective solar cell production since a similar anneal is required to fire screen-printed contacts. Application of the stack to passivated rear screen-printed solar cells has resulted in V(oc)'s of 641 mV and 633 mV on 0.65 Ω-cm and 1.3 Ω-cm FZ Si substrates, respectively. These V(oc) values are roughly 20 mV higher than for cells with untreated, highly recombinative back surfaces. The stack passivation has also been used to form fully screen-printed bifacial solar cells which exhibit rear-illuminated efficiency as high as 11.6% with a single layer AR coating.en
dc.language.isoen_USen
dc.publisherGeorgia Institute of Technologyen
dc.subjectSolar cellsen
dc.subjectSilicon solar cellsen
dc.subjectPassivation schemesen
dc.titleEffective Passivation of the Low Resistivity Silicon Surface by a Rapid Thermal Oxide/PECVD Silicon Nitride Stack and Its Application to Passivated Rear and Bifacial Si Solar Cellsen
dc.typeProceedingsen
dc.contributor.corporatenameSandia National Laboratories
dc.contributor.corporatenameGeorgia Institute of Technology. University Center of Excellence for Photovoltaic Research and Education


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