In-situ Cryogenic Single-Event Effects Testing of High-Speed SiGe BiCMOS Devices

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Title: In-situ Cryogenic Single-Event Effects Testing of High-Speed SiGe BiCMOS Devices
Author: Walker, D. Greg ; Black, Jeffrey D. ; Pellish, Jonathan A. ; Alles, Michael L. ; Reed, Robert A. ; Ramachandran, Vishwanath
Abstract: We present details of a first-of-a-kind system that has been custom-designed to enable in-situ single-event (SE) testing at cryogenic temperatures. The system is capable of using either liquid nitrogen (LN2, 77K) or liquid helium (LHe, 4K) as cryogens, and also includes a heating plate for fine adjustment of temperatures. This enables emulation of combined temperature and radiation environments such as those on the surfaces of the Earth's moon and those of other planets like Jupiter (Europa) and Saturn (Enceladus), where surface temperatures fluctuate from 50K at night to 400K during daytime. As part of the NASA Exploration Technology Development Program (ETDP), this project aims to aid future NASA missions to the above planets and/or moons by providing both qualitative and quantitative insights into the SE response of high-speed SiGe BiCMOS devices at cryogenic temperatures. This work also establishes excellent synergy with other NASA efforts such as the Radiation Hardened Electronics for Space Environments (RHESE) and NASA Electronic Parts and Packaging (NEPP) programs.
Description: This presentation was part of the session : Extreme Environments Sixth International Planetary Probe Workshop
Type: Proceedings
Date: 2008-06-25
Contributor: Vanderbilt University. Dept. of Electrical Engineering and Computer Science
Vanderbilt University. Institute for Space and Defense Electronics
Vanderbilt University. Dept. of Mechanical & Materials Engineering
Relation: IPPW08. Extreme Environments
Publisher: Georgia Institute of Technology
Subject: Single-event effects
Cryogenic temperature

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