Modeling of the excited modes in inverted embedded microstrip lines using the finite-difference time-domain (FDTD) technique
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This thesis investigates the presence of multiple (quasi-TEM) modes in inverted embedded microstrip lines. It has already been shown that parasitic modes do exist in inverted embedded microstrips due to field leakage inside the dielectric substrate, especially for high dielectric constants (like Silicon). This thesis expands upon that work and characterizes those modes for a variety of geometrical dimensions. Chapter 1 focuses on the theory behind the different transmission line modes, which may be present in inverted embedded microstrips. Based on the structure of the inverted embedded microstrip, the conventional microstrip mode, the quasi-conventional microstrip mode, and the stripline mode are expected. Chapter 2 discusses in detail the techniques used to decompose the total probed field into the various modes present in the inverted embedded microstrip lines. Firstly, a short explanation of the finite-difference time-domain method, that is used for the simulation and modeling of inverted microstrips up to 50 GHz is provided. Next, a flowchart of the process involved in decomposing the modes is laid out. Lastly, the challenges of this approach are also highlighted to give an appreciation of the difficulty in obtaining accurate results. Chapter 3 shows the results (dispersion diagrams, values/percentage of the individual mode energies ) obtained after running time-domain simulations for a variety of geometrical dimensions. Chapter 4 concludes the thesis by explaining the results in terms of the transmission line theory presented in Chapter 1. Next, possible future work is mentioned.