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dc.contributor.authorZhou, Jun
dc.contributor.authorGong, Li
dc.contributor.authorDeng, Shao Zhi
dc.contributor.authorChen, Jun
dc.contributor.authorShe, Jun Cong
dc.contributor.authorXu, Ning Sheng
dc.contributor.authorYang, Rusen
dc.contributor.authorWang, Z. L. (Zhong Lin)
dc.date.accessioned2009-02-25T20:58:26Z
dc.date.available2009-02-25T20:58:26Z
dc.date.issued2005-11-21
dc.identifier.citationApplied Physics Letters, 87 (2005) 223108en
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1853/27105
dc.description©2005 American Institute of Physics. The electronic version of this article is the complete one and can be found online at: http://link.aip.org/link/?APPLAB/87/223108/1en
dc.descriptionDOI:10.1063/1.2136006
dc.description.abstractLarge-area, quasialigned nanotips of tungsten oxide have been grown by a two-step high-temperature, catalyst-free, physical evaporation deposition process. The tungsten oxide nanotips are single crystalline with growth direction of [010]. The tungsten oxide nanotips exhibit excellent field-emission properties with a low threshold field (for an emission current density of 10 mA/cm²) ~4.37 MV/m and uniform emission from the entire arrays, as well as high time stability. These results make tungsten oxide nanotip arrays a competitive candidate for field-emission displays.en
dc.language.isoen_USen
dc.publisherGeorgia Institute of Technologyen
dc.subjectTungsten compoundsen
dc.subjectSemiconductor materialsen
dc.subjectField emissionen
dc.subjectNanostructured materialsen
dc.subjectSemiconductor growthen
dc.subjectEvaporationen
dc.subjectCurrent densityen
dc.titleGrowth and field-emission property of tungsten oxide nanotip arraysen
dc.typeArticleen
dc.contributor.corporatenameGeorgia Institute of Technology. School of Materials Science and Engineering
dc.contributor.corporatenameSun Yat-sen University (Guangzhou, China)
dc.publisher.originalAmerican Institute of Physics


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