Epitaxial growth of BaTiO₃ thin films at 600 °C by metalorganic chemical vapor deposition

View/ Open
Date
1995-05-22Author
Kaiser, D. L.
Vaudin, M. D.
Rotter, L. D.
Wang, Z. L. (Zhong Lin)
Cline, J. P.
Hwang, C. S.
Marinenko, R. B.
Gillen, J. G.
Metadata
Show full item recordAbstract
BaTiO₃ thin films were grown epitaxially on (100) MgO substrates by metalorganic chemical vapor deposition (MOCVD) at a temperature of 600 °C. This substrate temperature is the lowest reported temperature for the growth of epitaxial BaTiO₃ films by an MOCVD process. The films had a cube–cube orientation relationship with the substrate and were oriented with an a-axis perpendicular to the substrate plane. Nanoscale energy dispersive x-ray spectrometry measurements showed no evidence of interdiffusion between the film and substrate.