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dc.contributor.authorWang, Z. L. (Zhong Lin)
dc.contributor.authorDai, Z. R.
dc.contributor.authorGao, Rui Ping
dc.contributor.authorBai, Zhigang
dc.contributor.authorGole, James L.
dc.date.accessioned2009-03-10T19:55:35Z
dc.date.available2009-03-10T19:55:35Z
dc.date.issued2000-11-20
dc.identifier.citationApplied Physics Letters, 77 (2000) 3349-3351en
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1853/27239
dc.description©2000 American Institute of Physics. The electronic version of this article is the complete one and can be found online at: http://link.aip.org/link/?APPLAB/77/3349/1en
dc.descriptionDOI:10.1063/1.1327281
dc.description.abstractElevated-temperature synthesis has been used to generate side-by-side biaxially structured silicon carbide–silica nanowires. The axial growth direction approaches [311] for nanowires with a high density of microtwins and is [211] for defect-free nanowires. The structure of these nanowires, their cross-sectional shape, and their structural transformation between a biaxial and coaxial configuration have been studied by transmission electron microscopy. The Young's modulus of the biaxially structured nanowires was measured to be 50–70 GPa depending on the size of the nanowire.en
dc.language.isoen_USen
dc.publisherGeorgia Institute of Technologyen
dc.subjectSilicon compoundsen
dc.subjectWide band gap semiconductorsen
dc.subjectSemiconductor quantum wiresen
dc.subjectNanostructured materialsen
dc.subjectTwin boundariesen
dc.subjectTransmission electron microscopyen
dc.subjectYoung's modulusen
dc.titleSide-by-side silicon carbide–silica biaxial nanowires: Synthesis, structure, and mechanical propertiesen
dc.typeArticleen
dc.contributor.corporatenameGeorgia Institute of Technology. School of Materials Science and Engineering
dc.contributor.corporatenameGeorgia Institute of Technology. School of Physics
dc.publisher.originalAmerican Institute of Physics


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