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dc.contributor.authorWu, Kehui
dc.contributor.authorWang, E. G.
dc.contributor.authorCao, Z. X.
dc.contributor.authorWang, Z. L. (Zhong Lin)
dc.contributor.authorJiang, X.
dc.date.accessioned2009-03-16T14:01:05Z
dc.date.available2009-03-16T14:01:05Z
dc.date.issued2000-09-01
dc.identifier.citationJournal of Applied Physics, 88 (2000) 2967-2974en
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1853/27248
dc.description©2000 American Institute of Physics. The electronic version of this article is the complete one and can be found online at: http://link.aip.org/link/?JAPIAU/88/2967/1en
dc.descriptionDOI:10.1063/1.1287602
dc.description.abstractNanocrystalline Nanocrystalline diamond films were grown by microwave plasma assisted chemical vapor deposition using N₂ and CH₄ as precursors. The microstructure of the films such as the diamond grain size, graphite content, and N incorporation, was controlled by introducing a small amount of hydrogen gas (0–10 sccm) in the growth. Effects of the growth parameters on the film microstructure were investigated using transmission electron microscopy, x-ray diffraction, Raman spectroscopy, and secondary ion mass spectroscopy. A surface stabilizing model is suggested to explain the formation mechanism of the uniformly grain size-controlled nanocrystalline diamond. A systematic investigation on the film microstructure and their field electron emission (FEE) property is presented for various films of different diamond grain sizes and graphite contents. It was found that the FEE property highly depended on the diamond/graphite mixed phase structure. Novel field emission properties (1 V/mum emission threshold and 10 mA/cm² emission current) are obtained by optimizing the growth parameters. A transport-tunneling mechanism is applied to explain the experimental observations. Our results showed that nanocrystalline diamond film can be a very promising cold cathode material for field emission applications.en
dc.language.isoen_USen
dc.publisherGeorgia Institute of Technologyen
dc.subjectElectron field emissionen
dc.subjectDiamonden
dc.subjectElemental semiconductorsen
dc.subjectSemiconductor thin filmsen
dc.subjectGrain sizeen
dc.subjectNitrogenen
dc.subjectNanostructured materialsen
dc.subjectPlasma CVDen
dc.subjectSemiconductor growthen
dc.subjectTransmission electron microscopyen
dc.subjectX-ray diffractionen
dc.subjectRaman spectraen
dc.subjectSecondary ion mass spectraen
dc.titleMicrostructure and its effect on field electron emission of grain-size-controlled nanocrystalline diamond filmsen
dc.typeArticleen
dc.contributor.corporatenameGeorgia Institute of Technology. School of Materials Science and Engineering
dc.contributor.corporatenameChinese Academy of Sciences. Institute of Physics
dc.contributor.corporatenameChinese Academy of Sciences. State Key Laboratory for Surface Physics
dc.contributor.corporatenameFraunhofer-Institut fur Schicht- und Oberflachentechnik
dc.publisher.originalAmerican Institute of Physics


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