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dc.contributor.authorYang, G. Y.en_US
dc.contributor.authorFinder, J. M.en_US
dc.contributor.authorWang, J.en_US
dc.contributor.authorWang, Z. L. (Zhong Lin)en_US
dc.contributor.authorYu, Z.en_US
dc.contributor.authorRamdani, J.en_US
dc.contributor.authorDroopad, R.en_US
dc.contributor.authorEisenbeiser, K. W.en_US
dc.contributor.authorRamesh, R.en_US
dc.date.accessioned2009-03-24T14:29:57Z
dc.date.available2009-03-24T14:29:57Z
dc.date.issued2002-01
dc.identifier.citationJournal of Materials Research, 17 (2002) 204-213en_US
dc.identifier.issn0884-2914
dc.identifier.urihttp://hdl.handle.net/1853/27351
dc.description©2002 Materials Research Society. The original publication is available at: http://www.mrs.org/en_US
dc.descriptionDOI: 10.1557/JMR.2002.0030en_US
dc.description.abstractMicrostructure in the SrTiO₃/Si system has been studied using high-resolution transmission electron microscopy and image simulations. SrTiO₃ grows heteroepitaxially on Si with the orientation relationship given by (001)STO//(001)Si and [100]STO//[110]Si. The lattice misfit between the SrTiO₃ thin films and the Si substrate is accommodated by the presence of interfacial dislocations at the Si substrate side. The interface most likely consists of Si bonded to O in SrTiO₃. The alternative presentation of Sr and Si atoms along the interface leads to the formation of 2× and 3× Sr configurations. Structural defects in the SrTiO₃ thin film mainly consist of tilted domains and dislocations.en_US
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectStrontium titanatesen_US
dc.subjectThin filmsen_US
dc.subjectMicrostructureen_US
dc.subjectLayer-by-layer depositionen_US
dc.subjectField-effect transistorsen_US
dc.subjectHigh-resolution transmission electron microscopyen_US
dc.titleStudy of microstructure in SrTiO₃/Si by high-resolution transmission electron microscopyen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Materials Science and Engineeringen_US
dc.contributor.corporatenameMotorola, inc. Physical Science Research Laboratoriesen_US
dc.contributor.corporatenameUniversity of Maryland (College Park, Md.). Materials Research Science and Engineering Centeren_US
dc.publisher.originalMaterials Research Societyen_US


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