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    Synthesis and characterization of Zn₁₋ₓMnₓO nanowires

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    2008_32_APL.pdf (405.2Kb)
    Date
    2008-04-21
    Author
    Zhang, Xiaomei
    Zhang, Yue
    Wang, Z. L. (Zhong Lin)
    Mai, Wenjie
    Gu, Yudong
    Chu, Wangsheng
    Wu, Ziyu
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    Abstract
    Mn doped ZnO nanowires (NWs) were fabricated by a one-step vapor-solid process at 500°C. The doped Mn exists in the wurtzite lattice as substitutional atom without forming secondary phases. X-ray absorption near-edge structure reveals that the doped Mn atoms occupy the Zn sites, and they lead to an expansion in lattice constants. The I-V characteristic of a single Zn₁₋ₓMnₓO NW shows a typical Ohmic contact with gold electrodes. The as-received NWs could be suitable for studying spintronics in one-dimensional diluted magnetic semiconductors.
    URI
    http://hdl.handle.net/1853/27470
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