Synthesis and characterization of Zn₁₋ₓMnₓO nanowires
Wang, Z. L. (Zhong Lin)
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Mn doped ZnO nanowires (NWs) were fabricated by a one-step vapor-solid process at 500°C. The doped Mn exists in the wurtzite lattice as substitutional atom without forming secondary phases. X-ray absorption near-edge structure reveals that the doped Mn atoms occupy the Zn sites, and they lead to an expansion in lattice constants. The I-V characteristic of a single Zn₁₋ₓMnₓO NW shows a typical Ohmic contact with gold electrodes. The as-received NWs could be suitable for studying spintronics in one-dimensional diluted magnetic semiconductors.