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dc.contributor.authorCampbell, Jenna
dc.date.accessioned2009-06-08T18:56:29Z
dc.date.available2009-06-08T18:56:29Z
dc.date.issued2009-05-04
dc.identifier.urihttp://hdl.handle.net/1853/28119
dc.description.abstractThis study develops a one-step anodization separation process (OSS) after examining two step and multi step liftoff procedures in which porous silicon (PS) films lift off from their substrates. This lift-off process provides a means to produce silicon filters, a worthy alternative to alumina filters that cannot withstand high temperatures as well as silicon and whose pore diameter has yet to reach into the order of microns. By electrochemical etching of p-type silicon wafers in a hydrofluoric acid-based solution, microporous filters with pore diameters varying from 1 to 2 microns whose depths range from 3 to 70 micrometers are fabricated. Using wafers with a resistivity of 14-22 Ω-cm, mobile filters with consistent structural qualities can be reproduced.en
dc.language.isoen_USen
dc.publisherGeorgia Institute of Technologyen
dc.subjectPorous siliconen
dc.subjectMicro/nano filmsen
dc.subjectActiveen
dc.subjectLift-offen
dc.subjectFilteren
dc.titleDevelopment of Porous Silicon Microfiltersen
dc.typeUndergraduate Thesisen
dc.contributor.departmentPhysics
dc.description.advisorJames Gole - Faculty Mentor ; Edward Conrad - Committee Member/Second Reader


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