Development of Porous Silicon Microfilters

Show simple item record

dc.contributor.author Campbell, Jenna
dc.date.accessioned 2009-06-08T18:56:29Z
dc.date.available 2009-06-08T18:56:29Z
dc.date.issued 2009-05-04
dc.identifier.uri http://hdl.handle.net/1853/28119
dc.description.abstract This study develops a one-step anodization separation process (OSS) after examining two step and multi step liftoff procedures in which porous silicon (PS) films lift off from their substrates. This lift-off process provides a means to produce silicon filters, a worthy alternative to alumina filters that cannot withstand high temperatures as well as silicon and whose pore diameter has yet to reach into the order of microns. By electrochemical etching of p-type silicon wafers in a hydrofluoric acid-based solution, microporous filters with pore diameters varying from 1 to 2 microns whose depths range from 3 to 70 micrometers are fabricated. Using wafers with a resistivity of 14-22 Ω-cm, mobile filters with consistent structural qualities can be reproduced. en
dc.language.iso en_US en
dc.publisher Georgia Institute of Technology en
dc.subject Porous silicon en
dc.subject Micro/nano films en
dc.subject Active en
dc.subject Lift-off en
dc.subject Filter en
dc.title Development of Porous Silicon Microfilters en
dc.type Undergraduate Thesis en
dc.contributor.department Physics
dc.description.advisor James Gole - Faculty Mentor ; Edward Conrad - Committee Member/Second Reader


Files in this item

Files Size Format View
campbell_jenna_m_200905_ro.pdf 1.751Mb PDF View/ Open

This item appears in the following Collection(s)

Show simple item record