Low-energy electron diffraction effects at complex interfaces
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Low-energy electron scattering was used as a tool to study electron-stimulated processes at complex interfaces. The electron diffraction in each complex interface is theoretically treated by a multiple scattering formalism for quantitative analysis. Mathematical descriptions of electron-stimulated processes and a multiple scattering expansion extended from the single-scattering case are presented. This analysis method was applied in three research topics: These are 1) electron-stimulated desorption of Cl+ from Si surfaces, 2) characterization of epitaxial graphene on Si-terminated SiC(0001), and 3) low-energy electron induced DNA damage. Zone-specific desorption of Cl+ from Si(111)- 7X7:Cl surfaces was demonstrated. Graphene epitaxially grown on SiC(0001) surfaces was analyzed using Auger electron diffraction and Raman scattering spectroscopy. Finally, the roles of interfacial water and dissociative electron attachment resonances in low-energy electron-induced DNA damage were revealed. Electron scattering calculations using the "path approach" were applied in all of the above mentioned studies. The combination of theory and experiment has lead to insight regarding electron scattering with complex targets.