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dc.contributor.authorBerg, Jordan M.en_US
dc.contributor.authorYezzi, Anthonyen_US
dc.contributor.authorTannenbaum, Allen R.en_US
dc.date.accessioned2010-04-13T19:45:22Zen_US
dc.date.available2010-04-13T19:45:22Zen_US
dc.date.issued1997-12
dc.identifier.citationJordan M. Berg, Anthony Yezzi and Allen Tannenbaum, Toward real-time estimation of surface evolution in plasma etching: isotropy, anisotropy, and self-calibration, Proceedings of 36th IEEE Conference on Decision and Control, December 1997, 860-865.en_US
dc.identifier.isbn0-7803-4187-2
dc.identifier.urihttp://hdl.handle.net/1853/32525
dc.description©1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or distribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.descriptionPresented at the 36th IEEE Conference on Decision and Control : December 10-12, 1997, Hyatt Regency San Diego, San Diego, CA, USA.en_US
dc.descriptionDOI: 10.1109/CDC.1997.650750en_US
dc.description.abstractLevel set methods are proving to be an effective tool for simulating surface evolution during chip manufacturing processes such as etching, deposition, and lithographic development. These methods can be implemented using extremely fast and robust algorithms, making them ideal for real-time model-based control applications. An approach for isotropic etching is developed and demonstrated in simulation. Modifcations necessary to address certain anisotropic processes and self-calibration of the estimator are sketched.en_US
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectParameter estimationen_US
dc.subjectProcess controlen_US
dc.subjectIntegrated circuit manufactureen_US
dc.subjectReal-time systemsen_US
dc.subjectSputter etchingen_US
dc.subjectCalibrationen_US
dc.titleToward real-time estimation of surface evolution in plasma etching: isotropy, anisotropy, and self-calibrationen_US
dc.typeProceedingsen_US
dc.contributor.corporatenameTexas Tech University. Dept. of Mechanical Engineeringen_US
dc.contributor.corporatenameUniversity of Minnesota. Dept. of Electrical Engineeringen_US
dc.publisher.originalInstitute of Electrical and Electronics Engineersen_US


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