Real-Time Control of Etching Processes: Experimental Results
Higman, Ted K.
Berg, Jordan M.
Tannenbaum, Allen R.
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A unified approach to the modelling, simulation, and control of thin film processing is presented. The focus of this approach is to combine in-situ sensing with a model that deals directly with evolving surfaces. Using this method, and an in-situ process modelling technique (e.g., plasma emission spectroscopy during reactive ion etching) is used as a source of inout data for a model which deals exclusively with interface evolution. In this way, in-situ monitoring gives predictive process control capability, rather than simple end-point detection.