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dc.contributor.authorShankar, Subramaniamen_US
dc.date.accessioned2010-09-15T19:07:44Z
dc.date.available2010-09-15T19:07:44Z
dc.date.issued2010-05-20en_US
dc.identifier.urihttp://hdl.handle.net/1853/34807
dc.description.abstractThis thesis explores the critical advantages of using silicon-germanium (SiGe) HBTs for RF front-end design. The first chapter looks at the SiGe BiCMOS technology platform and its important performance metrics. The second chapter discusses ultra-wide tuneability and the critical role that this functionality can have on real world applications. The third chapter presents simulated and measured results of two wideband ring oscillators (8-18 GHz) designed and fabricated in the Jazz 120 BiCMOS platform. A 7-22 GHz wideband VGA in the 8HP platform is also presented further exemplifying the wideband capabilities of SiGe HBTs.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectCircuit designen_US
dc.subjectSigeen_US
dc.subjectUltra-wide tunableen_US
dc.subjectSilicon-germaniumen_US
dc.subject.lcshHeterojunctions
dc.subject.lcshBiopolar transistors
dc.subject.lcshGermanium compounds
dc.subject.lcshSilicon compounds
dc.subject.lcshWireless communication systems
dc.titleUltra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistorsen_US
dc.typeThesisen_US
dc.description.degreeM.S.en_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.description.advisorCommittee Chair: Cressler,John D.; Committee Member: Papapolymerou, John; Committee Member: Tentzeris,Emmanouilen_US


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