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dc.contributor.authorRohatgi, Ajeeten_US
dc.contributor.authorKang, Moon Heeen_US
dc.contributor.authorEbong, Abasifrekeen_US
dc.contributor.authorRounsaville, Brianen_US
dc.date.accessioned2012-02-01T17:25:35Z
dc.date.available2012-02-01T17:25:35Z
dc.date.issued2010-12-24en_US
dc.identifier.other10647en_US
dc.identifier.urihttp://hdl.handle.net/1853/42317
dc.descriptionIssued as final reporten_US
dc.description.sponsorshipSixtron Advanced Materialsen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.relation.ispartofseriesSchool of Electrical and Computer Engineering ; Project no. 108694en_US
dc.titleDevelopment of PECVD (SiCxNy) films with a novel silane free technology ....en_US
dc.title.alternativeOptimizing the silane-free silicon carbon nitride (SiCxNy) antireflection coatingen_US
dc.typeTechnical Reporten_US
dc.contributor.corporatenameGeorgia Institute of Technology. Office of Sponsored Programsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineeringen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Office of Sponsored Programs


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