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dc.contributor.authorFiller, Michael
dc.date.accessioned2012-09-18T17:01:56Z
dc.date.available2012-09-18T17:01:56Z
dc.date.issued2012-08-28
dc.identifier.urihttp://hdl.handle.net/1853/44680
dc.descriptionMichael Filler presented a lecture at the Nano@Tech Meeting on August 28, 2012 at 12 noon in room 1116 of the Marcus Nanotechnology Building.en_US
dc.descriptionDr. Michael A. Filler is an Assistant Professor in the School of Chemical & Biomolecular Engineering at the Georgia Institute of Technology. He received his doctorate in Chemical Engineering at Stanford University and was a postdoctoral scholar in the Department of Applied Physics at the California Institute of Technology. Dr. Filler’s research program lies at the intersection of chemical engineering and materials science, focusing on the synthesis and characterization of next generation electronic and photonic materials. The application of in-situ spectroscopic techniques to understand relevant interface phenomena and rationally engineer nanoscale semiconductors is a major component of his work. Dr. Filler has received several honors and recognitions including the National Science Foundation CAREER Award, Dorothy M. and Earl S. Hoffman Award from the American Vacuum Society, and the Georgia Tech CETL/BP Junior Faculty Teaching Excellence Award. He was also an invited speaker at the 2011 NAE EU-US Frontiers of Engineering Conference.
dc.descriptionRuntime: 49:51 minutes
dc.description.abstractSemiconductor nanowires are promising building blocks for a diverse range of next generation electronic, photonic, and energy conversion devices. The physical properties of these materials, and nanostructures in general, are intimately connected to their structure, which must be controlled with atomic-level precision. Unfortunately, the accessible design space remains limited by a reliance on chemistries that were originally developed for 2-D thin film growth. The 3-D nature of nanowires requires new strategies with which to manipulate growth processes and engineer structure. This talk will provide an overview of our recent efforts to advance semiconductor nanowire complexity and function by expanding the available synthetic “toolkit.” Our experimental approach couples the real-time in-situ spectroscopic interrogation of nanowire chemistry with post-growth structural characterization. We connect nanowire crystal structure with the specific chemical bonds present during synthesis and, in doing so, provide a robust foundation from which to rationally achieve novel structural motifs. The role of hydrogen as the root cause of well-known phenomena in Si nanowire growth will be discussed in detail. We subsequently leverage this fundamental knowledge to generate new types of superstructures with user-defined periodicity.en_US
dc.format.extent49:51 minutes
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectChemistryen_US
dc.subjectNanotechnologyen_US
dc.subjectSemiconductoren_US
dc.titleExpanding the Semiconductor Nanowire Design Spaceen_US
dc.typeLectureen_US
dc.typeVideoen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Nanotechnology Research Center
dc.contributor.corporatenameGeorgia Institute of Technology. School of Chemical and Biomolecular Engineering


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