Browsing Center for Organic Photonics and Electronics (COPE) by Title
Now showing items 131-150 of 397
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Gains for RF tags using multiple antennas
(Georgia Institute of TechnologyInstitute of Electrical and Electronics Engineers, 2008-02)Backscatter radio systems, including high frequency radio frequency identification (RFID), operate in the dyadic backscatter channel - a two-way pinhole channel that has deeper small-scale fades than that of a conventional ... -
A general diagrammatic algorithm for contraction and subsequent simplification of second-quantized expressions
(Georgia Institute of TechnologyAmerican Institute of Physics, 2004-08)We present a general computer algorithm to contract an arbitrary number of second-quantized expressions and simplify the obtained analytical result. The functions that perform these operations are a part of the program ... -
General methods for designing single-mode planar photonic crystal waveguides in hexagonal lattice structures
(Georgia Institute of TechnologyOptical Society of America, 2003-06)We systematically investigate and compare general methods of designing single mode photonic crystal waveguides in a two-dimensional hexagonal lattice of air holes in a dielectric material. We apply the rather general methods ... -
Global optimization of sensitivity and dynamic range for two-center holographic recording
(Georgia Institute of TechnologyOptical Society of America, 2003-03)The performance of two-center holographic recording is theoretically studied and described in detail. We present a systematic method for global optimization of two-center holographic recording. Whereas the method presented ... -
Growth direction and morphology of ZnO nanobelts revealed by combining in situ atomic force microscopy and polarized Raman spectroscopy
(Georgia Institute of TechnologyAmerican Physical Society, 2010-01)Control over the morphology and structure of nanostructures is essential for their technological applications, since their physical properties depend significantly on their dimensions, crystallographic structure, and growth ... -
Heat dissipation in high-power GaN electronics on thermally resistive substrates
(Georgia Institute of TechnologyInstitute of Electrical and Electronics Engineers, 2005-08)The heat dissipation in GaN devices grown on low thermal conductivity lithium gallate (LGO) substrates was investigated. The thermal conductivity of single-crystal LGO was measured utilizing the 3ω technique for ... -
Hexagonal and cubic TiOF₂
(Georgia Institute of TechnologyInternational Union of Crystallography, 2010-08)The chemical, electrochemical, optical and electro-optical properties of titanium oxyfluoride, TiOF₂, have led to interest in this compound for a number of applications. Prior analyses have indicated that TiOF₂possesses a ... -
High accuracy ab initio studies of Li-6(+), Li-6(-), and three isomers of Li-6
(Georgia Institute of TechnologyAmerican Institute of Physics, 2005-02)The structures and energetics of Li6+, Li6− and three isomers of Li6 are investigated using the coupled-cluster singles, doubles and perturbative triples [CCSD(T)] method with valence and core-valence correlation consistent ... -
High quality planar silicon nitride microdisk resonators for integrated photonics in the visible wavelength range
(Georgia Institute of TechnologyOptical Society of America, 2009-08)High quality factor (Q≈3.4×10⁶) microdisk resonators are demonstrated in a Si3N4 on SiO₂ platform at 652–660 nm with integrated in-plane coupling waveguides. Critical coupling to several radial modes is demonstrated using ... -
High sensitivity nonchemically amplified molecular resists based on photosensitive dissolution inhibitors
(Georgia Institute of TechnologyAmerican Vacuum Society, 2010-11)A new class of nonchemically amplified molecular resists has been made based on the use of photosensitive protecting groups. The deprotection during exposure converts a dissolution inhibiting compound into a dissolution ... -
High-performance and electrically stable C ₆₀ organic field-effect transistors
(Georgia Institute of TechnologyAmerican Institute of Physics, 2007-08)Electron mobility ranging from 2.7 to 5.0 cm²/V s was achieved when treating the gate dielectric with divinyltetramethyldisiloxane bis(benzocyclobutene) and depositing C ₆₀ at room temperature. The transistors combine ... -
High-performance C-60 n-channel organic field-effect transistors through optimization of interfaces
(Georgia Institute of TechnologyAmerican Institute of Physics, 2008-11-15)High-performance C-60 organic field-effect transistors (OFETs) have been obtained by engineering the essential electrode/semiconductor and dielectric/semiconductor interfaces. By using calcium (Ca) as the source and drain ... -
High-performance InGaZnO thin-film transistors with high-k amorphous Ba₀.₅Sr₀.TiO₃gate insulator
(Georgia Institute of TechnologyAmerican Institute of Physics, 2008-12)We report on high-performance n-channel thin-film transistors (TFTs) fabricated using amorphous indium gallium zinc oxide (a-IGZO) and amorphous Ba₀.₅Sr₀.₅TiO₃ (α-BST) as the channel and gate dielectric layers, respectively. ... -
High-performance photorefractive polymer operating at 1550 nm with near-video-rate response time
(Georgia Institute of TechnologyAmerican Institute of Physics, 2005-10)The development of a high-performance photorefractive polymer composite operating at 1550 nm is reported. We show 40% internal diffraction efficiency with response time of 35 ms and a net gain of 20 cm ⁻¹ in four-wave ... -
High-performance photorefractive polymer operating at 975 nm
(Georgia Institute of TechnologyAmerican Institute of Physics, 2004-08)A family of photorefractive polymer composites has been developed that enable high-performance device operation at a wavelength of 975 nm. This constitutes a major extension into the near-infrared spectral region for the ... -
High-performance photorefractive polymers sensitized by cadmium selenide nanoparticles
(Georgia Institute of TechnologyAmerican Institute of Physics, 2004-07)We report on efficient and fast hybrid photorefractive polymer sensitized with cadmium selenide (CdSe) quantum dots. The surface of the quantum dots was treated with 4-methylbenzenethiol. This surfactant is responsible for ... -
High-Q micromechanical resonators in a two-dimensional phononic crystal slab
(Georgia Institute of TechnologyAmerican Institute of Physics, 2009-02)By creating line defects in the structure of a phononic crystal (PC) made by etching a hexagonal array of holes in a 15 μm thick slab of silicon, high-Q PC resonators are fabricated using a complimentary-metal-oxide-semi ... -
Highly efficient green phosphorescent organic light-emitting diodes with simplified device geometry
(Georgia Institute of TechnologyAmerican Institute of Physics, 2008-06)We report on the performance of green phosphorescent organic light-emitting diodes based on the well-known host 4,4′-di(carbazol-9-yl)-biphenyl and the green phosphor emitter fac tris(2-phenylpyridinato-N,C²′) iridium. ... -
Highly efficient inverted top-emitting green phosphorescent organic light-lightemitting diodes on glass and flexible substrates
(Georgia Institute of TechnologyAmerican Institute of Physics, 2012-07)Green phosphorescent inverted top-emitting organic light-emitting diodes with high current efficacy and luminance are demonstrated on glass and polyethersulfone (PES) substrates coated with polyethylene dioxythiophene-polystyrene ... -
Highly specular carbon nanotube absorbers
(Georgia Institute of TechnologyAmerican Institute of Physics, 2010-10)Specular black materials have important applications, such as in absolute cryogenic radiometers, space-borne spectroradiometers, and some energy conversion devices. While vertically aligned carbon nanotubes (VACNT) can ...