Browsing Center for Organic Photonics and Electronics (COPE) by Title
Now showing items 179-198 of 397
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Label-free flow cytometry using multiplex coherent anti-Stokes Raman scattering (MCARS) for the analysis of biological specimens
(Georgia Institute of TechnologyOptical Society of America, 2011-06)We present the first demonstration, to our knowledge, of a label-free flow cytometer for the analysis of biological specimens using multiplex coherent anti-Stokes Raman scattering (MCARS) and elastic scatter measurements. ... -
Large-aperture switchable thin diffractive lens with interleaved electrode patterns
(Georgia Institute of TechnologyAmerican Institute of Physics, 2006-10)The authors report on a high-performance large-aperture switchable diffractive lens using nematic liquid crystal that can be used as an adaptive eyewear. The odd- and even-numbered ring electrodes are separated in two ... -
Large-scale array of small high-Q microdisk resonators for on-chip spectral analysis
(Georgia Institute of TechnologyInstitute of Electrical and Electronics Engineers, 2009-10)We demonstrate on-chip, large-scale arrays of small high-Q microdisk resonators, suitable for both in-plane coupling and out-of-plane (imaging) spectral analysis devices with high resolution (linewidth < 50pm to 0.5nm), ... -
Large-scale symmetry-adapted perturbation theory computations via density fitting and Laplace transformation techniques: Investigating the fundamental forces of DNA-intercalator interactions
(Georgia Institute of TechnologyAmerican Institute of Physics, 2011-11)Symmetry-adapted perturbation theory (SAPT) provides a means of probing the fundamental nature of intermolecular interactions. Low-orders of SAPT (here, SAPT0) are especially attractive since they provide qualitative ... -
Lateral field excitation of thickness shear mode waves in a thin film ZnO solidly mounted resonator
(Georgia Institute of TechnologyAmerican Institute of Physics, 2007-03-01)In recent years, interest in the development of highly sensitive acoustic wave devices as biosensor platforms has grown. A considerable amount of research has been conducted on AT-cut quartz resonators both in thickness ... -
Leaky surface acoustic waves in Z-LiNbO ₃ substrates with epitaxial AlN overlays
(Georgia Institute of TechnologyAmerican Institute of Physics, 2004-10)The properties of leaky surface acoustic waves (LSAW) in MBE grown AIN layer on Z-cut LiNbO₃ structures have been studied by numerical simulation and experimental measurements and compared with those of Rayleigh waves in ... -
Linear and nonlinear optical properties of Ag/Au bilayer thin films
(Georgia Institute of TechnologyOptical Society of America, 2012-04)The linear and nonlinear optical properties of Ag/Au bilayer metallic thin films with a total thickness of around 20 nm and with different Ag/Au mass-thickness ratios were studied. This study shows that the spectral ... -
Linear ripples and traveling circular ripples produced on polymers by thermal AFM probes
(Georgia Institute of TechnologyAmerican Physical Society, 2009-06)We discuss the time and temperature evolution of the nanometer-scale surface undulations (ripples) produced by a heated atomic force microscope (AFM) tip scanning across surfaces of several amorphous polymers. During linear ... -
Link envelope correlation in the backscatter channel
(Georgia Institute of TechnologyInstitute of Electrical and Electronics Engineers, 2007-09)High-frequency backscatter radio systems operate in the dyadic backscatter channel, a pinhole channel whose envelope probability density function and bit-error-rate performance are strongly affected by link envelope ... -
Local wettability modification by thermochemical nanolithography with write-read-overwrite capability
(Georgia Institute of TechnologyAmerican Institute of Physics, 2007-12)The wettability of a thin polymer film was modified twice by thermochemical nanolithography. By means of a first local chemical modification induced by an atomic force microscope tip heated to 110±20 °C, hydrophilic ... -
Long-range corrected hybrid functionals for pi-conjugated systems: Dependence of the range-separation parameter on conjugation length
(Georgia Institute of TechnologyAmerican Institute of Physics, 2011-11)Long-range corrected hybrids represent an increasingly popular class of functionals for density functional theory (DFT) that have proven to be very successful for a wide range of chemical applications. In this Communication, ... -
Loss measurement of plasmonic modes in planar metal-insulator-metal waveguides by an attenuated total reflection method
(Georgia Institute of TechnologyOptical Society of America, 2010-11)We report experimental excitation and characterization of surface plasmon modes in planar metal–insulator–metal (MIM) waveguides. Our approach is based on determining the width of the reflection angular spectrum in the ... -
Low-density parity-check codes for volume holographic memory systems
(Georgia Institute of TechnologyOptical Society of America, 2003-02)We investigate the application of low-density parity-check (LDPC) codes in volume holographic memory (VHM) systems. We show that a carefully designed irregular LDPC code has a very good performance in VHM systems. We ... -
Low-voltage C-60 organic field-effect transistors with high mobility and low contact resistance
(Georgia Institute of TechnologyAmerican Institute of Physics, 2008-09-29)State-of-the-art C60 organic transistors are reported here by engineering the essential electrode/semiconductor and dielectric/semiconductor interfaces. By using calcium (Ca) as the source and drain electrodes, the ... -
Low-voltage flexible organic complementary inverters with high noise margin and high dc gain
(Georgia Institute of TechnologyAmerican Institute of Physics, 2009-01)We report on flexible organic complementary inverters using pentacene and C₆₀ as active semiconductors fabricated on a plastic substrate. Individual transistors as well as inverters show good operational stability with ... -
Low-voltage InGaZnO thin-film transistors with Al₂O₃ gate grown by atomic layer deposition
(Georgia Institute of TechnologyAmerican Institute of Physics, 2009-06)We report on low-voltage, high-performance amorphous indium gallium zinc oxide n-channel thin-film transistors fabricated using 100-nm-thick Al₂O₃ grown by atomic layer deposition as the gate dielectric layer. The Al₂O₃ ... -
Low-voltage pentacene organic field-effect transistors with high-kappa HfO₂ gate dielectrics and high stability under bias stress
(Georgia Institute of TechnologyAmerican Institute of Physics, 2009-12)Low-voltage pentacene organic field-effect transistors are demonstrated (operating voltage of −3 V) with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at 200 °C. A high hole mobility of 0.39 cm²/V s ... -
Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO₂ gate dielectrics grown by atomic layer deposition
(Georgia Institute of TechnologyAmerican Institute of Physics, 2009-12)High performance solution-processed n-channel organic field-effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with low operating voltages (3 V) are demonstrated using a high-k hafnium dioxide gate ... -
Magnetic properties of bulk Zn₁₋ₓMnₓO and Zn₁₋ₓCoₓO single crystals
(Georgia Institute of TechnologyAmerican Institute of Physics, 2004-12)Manganese and cobalt-doped ZnO have been produced using a modified melt-growth technique. X-ray diffraction measurements indicate that the samples are high-quality single crystals with ω−2θ full width at half maximum values ... -
Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga₁₋ₓMnₓN
(Georgia Institute of TechnologyAmerican Vacuum Society, 2006-07)The structural properties and lattice dynamics of Ga₁₋ₓMnₓN were studied for Mn concentrations from 0.0% to 1.5%. Ga₁₋ₓMnₓN layers were fabricated by either Mn incorporation during the metal-organic chemical vapor deposition ...