Browsing Center for Organic Photonics and Electronics (COPE) by Subject "Amorphous semiconductors"
Now showing items 1-3 of 3
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High-performance InGaZnO thin-film transistors with high-k amorphous Ba₀.₅Sr₀.TiO₃gate insulator
(Georgia Institute of TechnologyAmerican Institute of Physics, 2008-12)We report on high-performance n-channel thin-film transistors (TFTs) fabricated using amorphous indium gallium zinc oxide (a-IGZO) and amorphous Ba₀.₅Sr₀.₅TiO₃ (α-BST) as the channel and gate dielectric layers, respectively. ... -
Low-voltage InGaZnO thin-film transistors with Al₂O₃ gate grown by atomic layer deposition
(Georgia Institute of TechnologyAmerican Institute of Physics, 2009-06)We report on low-voltage, high-performance amorphous indium gallium zinc oxide n-channel thin-film transistors fabricated using 100-nm-thick Al₂O₃ grown by atomic layer deposition as the gate dielectric layer. The Al₂O₃ ... -
Thermal transport properties of thin films of small molecule organic semiconductors
(Georgia Institute of TechnologyAmerican Institute of Physics, 2005-12)A series of harmonic Joule-heating experiments have been employed to determine the thermal conductivities of thin films of pentacene, N,N -diphenyl−N,N -di 3-methylphenyl − 1,1 -biphenyl -4,4 -diamine, and tris 8-hydroquinolinato ...