• High-performance InGaZnO thin-film transistors with high-k amorphous Ba₀.₅Sr₀.TiO₃gate insulator 

      Kim, Jungbae; Fuentes-Hernandez, Canek; Kippelen, Bernard (Georgia Institute of TechnologyAmerican Institute of Physics, 2008-12)
      We report on high-performance n-channel thin-film transistors (TFTs) fabricated using amorphous indium gallium zinc oxide (a-IGZO) and amorphous Ba₀.₅Sr₀.₅TiO₃ (α-BST) as the channel and gate dielectric layers, respectively. ...
    • Low-voltage InGaZnO thin-film transistors with Al₂O₃ gate grown by atomic layer deposition 

      Kim, Jungbae; Fuentes-Hernandez, Canek; Potscavage, William J., Jr.; Zhang, Xiaohong; Kippelen, Bernard (Georgia Institute of TechnologyAmerican Institute of Physics, 2009-06)
      We report on low-voltage, high-performance amorphous indium gallium zinc oxide n-channel thin-film transistors fabricated using 100-nm-thick Al₂O₃ grown by atomic layer deposition as the gate dielectric layer. The Al₂O₃ ...
    • Thermal transport properties of thin films of small molecule organic semiconductors 

      Kim, Namsu; Domercq, Benoit; Yoo, SeungHyup; Christensen, Adam; Kippelen, Bernard; Graham, Samuel (Georgia Institute of TechnologyAmerican Institute of Physics, 2005-12)
      A series of harmonic Joule-heating experiments have been employed to determine the thermal conductivities of thin films of pentacene, N,N -diphenyl−N,N -di 3-methylphenyl − 1,1 -biphenyl -4,4 -diamine, and tris 8-hydroquinolinato ...