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Effect of phosphonic acid surface modifiers on the work function of indium tin oxide and on the charge injection barrier into organic single-layer diodes
(Georgia Institute of Technology, 2009)
We investigate the use of several phosphonic acid surface modifiers in order to increase the indium tin oxide (ITO) work function in the range of 4.90–5.40 eV. Single-layer diodes consisting of ITO/modifier/N,N′-diphenyl ...