Now showing items 1-5 of 5
High-performance and electrically stable C ₆₀ organic field-effect transistors
(Georgia Institute of Technology, 2007-08)
Electron mobility ranging from 2.7 to 5.0 cm²/V s was achieved when treating the gate dielectric with divinyltetramethyldisiloxane bis(benzocyclobutene) and depositing C ₆₀ at room temperature. The transistors combine ...
Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering
(Georgia Institute of Technology, 2010-09)
We demonstrate that holes from a p-doped N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) layer transfer to an adjacent pentacene film. The spatial separation of carriers from dopants, or remote doping, ...
Enhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layer
(Georgia Institute of Technology, 2011-10)
Insertion of a low-k polymer dielectric layer between the SiO₂ gate dielectric and poly(benzobisimidazobenzophenanthroline) (BBL) semiconductor of n-channel transistors is found to increase the field-effect mobility of ...
Shallow trap states in pentacene thin films from molecular sliding
(Georgia Institute of Technology, 2005-04)
Petacene is one of the most promising organic semiconductors for thin-film transistors. Transport measurements in the past have established the presence of shallow traps but their origins have remained a mystery. Here we ...
Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability
(Georgia Institute of Technology, 2012-03)
We report on the operational stability of low-voltage hybrid organic-inorganic complementary inverters with a top-gate bottom source-drain geometry. The inverters are comprised of p-channel pentacene and n-channel amorphous ...