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dc.contributor.authorSoltani, Mohammaden_US
dc.contributor.authorLi, Qingen_US
dc.contributor.authorYegnanarayanan, Sivaen_US
dc.contributor.authorAdibi, Alien_US
dc.date.accessioned2012-11-06T21:02:56Z
dc.date.available2012-11-06T21:02:56Z
dc.date.issued2007-12
dc.identifier.citationSoltani, Mohammad and Li, Qing and Yegnanarayanan, Siva and Adibi, Ali, "Improvement of thermal properties of ultra-high Q silicon microdisk resonators," Optics Express, 15, 25, 17305-17312 (December 10 2007)en_US
dc.identifier.issn1094-4087
dc.identifier.urihttp://hdl.handle.net/1853/45270
dc.description© 2007 Optical Society of Americaen_US
dc.descriptionThe definitive version of this paper is available at: http://dx.doi.org/10.1364/OE.15.017305en_US
dc.descriptionDOI: 10.1364/OE.15.017305en_US
dc.description.abstractWe present a detailed study of the thermal properties of ultra-high quality factor (Q) microdisk resonators on silicon-on-insulator (SOI) platforms. We show that by preserving the buried oxide layer underneath the Si resonator and by adding a thin Si pedestal layer at the interface between the resonator and the oxide layer we can increase the overall thermal conductivity of the structure while the ultra-high Q property is preserved. This allows higher field intensities inside the resonator which are crucial for nonlinear optics applications.en_US
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectIntegrated optics devicesen_US
dc.subjectResonatorsen_US
dc.titleImprovement of thermal properties of ultra-high Q silicon microdisk resonatorsen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineeringen_US
dc.publisher.originalOptical Society of Americaen_US
dc.identifier.doi10.1364/OE.15.017305


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