Optimization of anisotropically etched silicon surface-relief gratings for substrate-mode optical interconnects

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Please use this identifier to cite or link to this item: http://hdl.handle.net/1853/45419

Title: Optimization of anisotropically etched silicon surface-relief gratings for substrate-mode optical interconnects
Author: Wu, Shun-Der ; Gaylord, Thomas K. ; Maikisch, Jonathan S. ; Glytsis, Elias N.
Abstract: The optimum profiles of right-angle-face anisotropically etched silicon surface-relief gratings illuminated at normal incidence for substrate-mode optical interconnects are determined for TE, TM, and random linear (RL) polarizations. A simulated annealing algorithm in conjunction with the rigorous coupled-wave analysis is used. The optimum diffraction efficiencies of the −1 forward-diffracted order are 37.3% , 67.1% , and 51.2% for TE-, TM-, and RL-polarization-optimized profiles, respectively. Also, the sensitivities to grating thickness, slant angle, and incident angle of the optimized profiles are presented.
Description: © 2006 Optical Society of America. The definitive version of this paper is available at: http://dx.doi.org/10.1364/AO.45.000015 DOI: 10.1364/AO.45.000015
Type: Article
URI: http://hdl.handle.net/1853/45419
ISSN: 0003-6935
Citation: Wu, SD and Gaylord, Thomas K. and Maikisch, JS and Glytsis, EN, "Optimization of anisotropically etched silicon surface-relief gratings for substrate-mode optical interconnects," Applied Optics, 45, 1, 15-21 (January 1 2006)
Date: 2006-01
Contributor: Georgia Institute of Technology. Center for Organic Photonics and Electronics
Georgia Institute of Technology. School of Electrical and Computer Engineering
Ethniko Metsovio Polytechneio (Greece)
Publisher: Georgia Institute of Technology
Optical Society of America
Subject: Detectors
Silicon
Diffraction gratings
Optical devices

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