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dc.contributor.authorQi, Yabingen_US
dc.contributor.authorMohapatra, Swagat K.en_US
dc.contributor.authorKim, Sang Boken_US
dc.contributor.authorBarlow, Stephenen_US
dc.contributor.authorMarder, Seth R.en_US
dc.contributor.authorKahn, Antoineen_US
dc.date.accessioned2012-11-30T17:33:01Z
dc.date.available2012-11-30T17:33:01Z
dc.date.issued2012-02
dc.identifier.citationQi, Yabing; Mohapatra, Swagat K.; Kim, Sang Bok; Barlow, Stephen; Marder, Seth R. and Kahn, Antoine, "Solution doping of organic semiconductors using air-stable n-dopants," Applied Physics Letters, 100, 8, (February 20 2012).en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1853/45457
dc.description© 2012 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3689760en_US
dc.descriptionDOI: 10.1063/1.3689760
dc.description.abstractSolution-based n-doping of the polymer poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} [P(NDI₂OD-T₂)] and the small molecule 6,13-bis(tri(isopropyl)silylethynyl)pentacene (TIPS-pentacene) is realized with the air-stable dimers of rhodocene, [RhCp₂]₂, and ruthenium(pentamethylcyclopentdienyl)(1,3,5-triethylbenzene), [Cp*Ru(TEB)]₂. Fermi level shifts, measured by direct and inverse photoemission spectroscopy, and orders of magnitude increase in current density and film conductivity point to strong n-doping in both materials. The strong reducing power of these air-stable dopants is demonstrated through the n-doping of TIPS-pentacene, a material with low electron affinity (3.0 eV). Doping-induced reduction of the hopping transport activation energy indicates that the increase in film conductivity is due in part to the filling of deep gap states by carriers released by the dopants.en_US
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectCarrier densityen_US
dc.subjectCurrent densityen_US
dc.subjectFermi levelen_US
dc.subjectHopping conductionen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectSemiconductor dopingen_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectSpectral line shiften_US
dc.titleSolution doping of organic semiconductors using air-stable n-dopantsen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Chemistry and Biochemistryen_US
dc.contributor.corporatenamePrinceton University. Dept. of Electrical Engineeringen_US
dc.publisher.originalAmerican Institute of Physicsen_US
dc.identifier.doi10.1063/1.3689760


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