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dc.contributor.authorPark, Byoungnam
dc.contributor.authorYou, Nam-Ho
dc.contributor.authorReichmanis, Elsa
dc.date.accessioned2012-11-30T17:34:22Z
dc.date.available2012-11-30T17:34:22Z
dc.date.issued2012-04
dc.identifier.citationPark, Byoungnam and You, Nam-Ho and Reichmanis, Elsa, "Exciton dissociation and charge trapping at poly(3-hexylthiophene)/phenyl-C61-butyric acid methyl ester bulk heterojunction interfaces: Photo-induced threshold voltage shifts in organic field-effect transistors and solar cells," Journal of Applied Physics, 111, 8, (April 15 2012).en_US
dc.identifier.issn0021-8979 (print)
dc.identifier.issn1089-7550 (online)
dc.identifier.urihttp://hdl.handle.net/1853/45460
dc.description© 2012 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.4705277en_US
dc.descriptionDOI: 10.1063/1.4705277
dc.description.abstractPhotoinduced charge transfer at an electron donor/acceptor interface is one of the most crucial processes in determining the power conversion efficiency of organic solar cell devices. Here, we address exciton dissociation and charge carrier trapping at poly(3-hexylthiophene) (P3HT)/phenyl-C61-butyric acid methyl ester (PCBM) bulk heterojunction interfaces electrically using a field effect transistor (FET). With a P3HT/PCBM composite film, we elucidated exciton dissociation and charge carrier recombination assisted by localized electronic states at the P3HT/PCBM interface via photoinduced threshold voltage shift measurements with respect to wavelength using FETs in combination with organic solar cell devices. Interestingly, the combination of light coupled with a significant quantity of PCBM within the film was required to observe ambipolar charge transport in P3HT/PCBM FETs. This phenomenon was addressed by filling of electron traps associated with PCBM under illumination and formation of the conducting pathways for both electrons and holes. A high density of carrier traps at the interface suggested by the FET results was confirmed in light intensity dependent short-circuit current (Jsc) and open-circuit voltage (Voc) measurements using solar cell devices.en_US
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectComposite material interfacesen_US
dc.subjectConducting polymersen_US
dc.subjectDissociationen_US
dc.subjectElectron-hole recombinationen_US
dc.subjectElectron trapsen_US
dc.subjectExcitonsen_US
dc.subjectHole trapsen_US
dc.subjectOrganic field effect transistorsen_US
dc.subjectPolymer filmsen_US
dc.subjectSolar cellsen_US
dc.subjectThin film transistorsen_US
dc.titleExciton dissociation and charge trapping at poly(3-hexylthiophene)/phenyl-C61-butyric acid methyl ester bulk heterojunction interfaces: Photo-induced threshold voltage shifts in organic field-effect transistors and solar cellsen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronics
dc.contributor.corporatenameGeorgia Institute of Technology. School of Chemical and Biomolecular Engineering
dc.contributor.corporatenameGeorgia Institute of Technology. School of Chemistry and Biochemistry
dc.contributor.corporatenameGeorgia Institute of Technology. School of Materials Science and Engineering
dc.contributor.corporatenameKorea Institute of Science and Technology. Institute of Advanced Composites Materials
dc.publisher.originalAmerican Institute of Physics
dc.identifier.doi10.1063/1.4705277


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