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    Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors

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    COPE_009.pdf (1018.Kb)
    Date
    2008-07-07
    Author
    Kim, P.
    Domercq, Benoit
    Jones, Simon C.
    Hotchkiss, Peter J.
    Marder, Seth R.
    Kippelen, Bernard
    Perry, Joseph W.
    Zhang, Xiaohong
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    Abstract
    We report on solution-processible high permittivity nanocomposite gate insulators based on BaTiO₃ nanoparticles, surface-modified with a phosphonic acid, in poly(4-vinylphenol) for organic field-effect transistors. The use of surface-modified BaTiO₃ nanoparticles affords high quality nanocomposite thin films at large nanoparticle volume fractions (up to 37 vol %) with a large capacitance density and a low leakage current (10⁻⁸ A/cm²). The fabricated pentacene field-effect transistors using these nanocomposites show a large on/off current ratio (I on/off 10 ⁴- 10 ⁶) due to the high capacitance density and small leakage current of the gate insulator.
    URI
    http://hdl.handle.net/1853/45538
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