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    An assessment of silicon-germanium BiCMOS technologies for extreme environment applications

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    lourenco_nelson_e_201212_mast.pdf (14.82Mb)
    Date
    2012-11-13
    Author
    Lourenco, Nelson Estacio
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    Abstract
    This thesis evaluates the suitability of silicon-germanium technology for electronic systems intended for extreme environments, such as ambient temperatures outside of military specification (-55 degC to 125 degC) range and intense exposures to ionizing radiation. Silicon-germanium devices and circuits were characterized at cryogenic and high-temperatures (up to 300 degC) and exposed to ionizing radiation, providing empirical evidence that silicon-germanium is an excellent platform for terrestrial and space-based electronic applications.
    URI
    http://hdl.handle.net/1853/45959
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    • Georgia Tech Theses and Dissertations [22398]
    • School of Electrical and Computer Engineering Theses and Dissertations [3127]

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