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dc.contributor.authorLee, Cheng-Tsung
dc.contributor.authorLawson, Richard A.
dc.contributor.authorHenderson, Clifford L.
dc.date.accessioned2013-03-28T16:20:19Z
dc.date.available2013-03-28T16:20:19Z
dc.date.issued2008-11
dc.identifier.citationLee, Cheng-Tsung; Lawson, Richard A. and Henderson, Clifford L., "Understanding the effects of photoacid distribution homogeneity and diffusivity on critical dimension control and line edge roughness in chemically amplified resists," Journal of Vacuum Science & Technology B, 26, 6, 2276-2280 (November 2008).en_US
dc.identifier.issn1071-1023 (print)
dc.identifier.issn1520-8567 (online)
dc.identifier.urihttp://hdl.handle.net/1853/46586
dc.description© 2008 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1116/1.2976601en_US
dc.descriptionDOI: 10.1116/1.2976601
dc.description.abstractResist critical dimension (CD) control and line edge roughness (LER) reduction has been one of the most challenging issues for sub-100 nm feature patterning in integrated circuit manufacturing. Among those factors dominating CD and LER, photoacid distribution homogeneity and diffusivity are major elements which are correlated to resist material design and have a direct impact on the lithography performance. In this work, a mesoscale stochastic model has been applied to investigate the joint effect of photoacid distribution homogeneity and diffusivity on resist lithography performance. Simulation results suggest that the high photoacid generator (PAG) loading and low photoacid diffusivity provided by polymer bound-PAG resist systems can provide superior lithography performance as compared to traditional blended-PAG resists, which is in good agreement with our previous experimental characterization of polymer bound-PAG resists. The results also suggest that resist image blur is proportional to the square root of the product of photoacid concentration generated at the line edge and the photoacid diffusion coefficient. LER was observed to be proportional to the product of the standard deviation of the extent of deprotection along the nominal line edge and the reciprocal of the gradient of the deprotection profile along the resist line edge.en_US
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectChemically amplified photoresisten_US
dc.subjectDiffusionen_US
dc.subjectCritical dimensionen_US
dc.subjectPhotoaciden_US
dc.titleUnderstanding the effects of photoacid distribution homogeneity and diffusivity on critical dimension control and line edge roughness in chemically amplified resistsen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Chemical and Biomolecular Engineeringen_US
dc.publisher.originalAmerican Vacuum Society
dc.identifier.doi10.1116/1.2976601
dc.embargo.termsnullen_US


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