dc.contributor.author | Lee, Cheng-Tsung | |
dc.contributor.author | Henderson, Clifford L. | |
dc.contributor.author | Wang, Mingxing | |
dc.contributor.author | Gonsalves, Kenneth E. | |
dc.contributor.author | Yueh, Wang | |
dc.date.accessioned | 2013-03-28T20:41:06Z | |
dc.date.available | 2013-03-28T20:41:06Z | |
dc.date.issued | 2007-11 | |
dc.identifier.citation | Lee, Cheng-Tsung; Henderson, Clifford L.; Wang, Mingxing; Gonsalves, Kenneth E. and Yueh, Wang, "Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance," Journal of Vacuum Science & Technology B, 25, 6, 2136-2139 (November 2007). | en_US |
dc.identifier.issn | 1071-1023 (print) | |
dc.identifier.issn | 1520-8567 (online) | |
dc.identifier.uri | http://hdl.handle.net/1853/46588 | |
dc.description | © 2007 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1116/1.2801868 | en_US |
dc.description | DOI: 10.1116/1.2801868 | |
dc.description.abstract | The need for chemically amplified resists
(CARs)
that can resolve sub-65-nm node features with
sufficient linewidth roughness
(LWR)
control and sensitivity to meet the requirements outlined in
the International Technology Roadmap for Semiconductors has placed a significant and daunting
challenge for the design of resist materials that can achieve these goals. In this article, the ability to
improve the performance of CARs designed for 193 nm lithography via the direct bonding of a
photoacid generator
(PAG)
anion into the resist polymer main chain has been investigated. The
bound-PAG anion resist is shown to achieve higher sensitivity and resolution with smaller LWR
than their blended-PAG resist analog. Binding of the PAG anion provides reduced photoacid
diffusivity, higher maximum PAG loadings, and more homogeneous PAG distributions that help
achieve these three critical resist requirements. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | Georgia Institute of Technology | en_US |
dc.subject | Bonding processes | en_US |
dc.subject | Diffusion | en_US |
dc.subject | Photoresists | en_US |
dc.subject | Polymers | en_US |
dc.title | Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance | en_US |
dc.type | Article | en_US |
dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
dc.contributor.corporatename | University of North Carolina at Charlotte. Dept. of Chemistry | en_US |
dc.contributor.corporatename | Intel Corporation | en_US |
dc.publisher.original | American Vacuum Society | |
dc.identifier.doi | 10.1116/1.2801868 | |
dc.embargo.terms | null | en_US |