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dc.contributor.authorLee, Cheng-Tsung
dc.contributor.authorHenderson, Clifford L.
dc.contributor.authorWang, Mingxing
dc.contributor.authorGonsalves, Kenneth E.
dc.contributor.authorYueh, Wang
dc.date.accessioned2013-03-28T20:41:06Z
dc.date.available2013-03-28T20:41:06Z
dc.date.issued2007-11
dc.identifier.citationLee, Cheng-Tsung; Henderson, Clifford L.; Wang, Mingxing; Gonsalves, Kenneth E. and Yueh, Wang, "Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance," Journal of Vacuum Science & Technology B, 25, 6, 2136-2139 (November 2007).en_US
dc.identifier.issn1071-1023 (print)
dc.identifier.issn1520-8567 (online)
dc.identifier.urihttp://hdl.handle.net/1853/46588
dc.description© 2007 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1116/1.2801868en_US
dc.descriptionDOI: 10.1116/1.2801868
dc.description.abstractThe need for chemically amplified resists (CARs) that can resolve sub-65-nm node features with sufficient linewidth roughness (LWR) control and sensitivity to meet the requirements outlined in the International Technology Roadmap for Semiconductors has placed a significant and daunting challenge for the design of resist materials that can achieve these goals. In this article, the ability to improve the performance of CARs designed for 193 nm lithography via the direct bonding of a photoacid generator (PAG) anion into the resist polymer main chain has been investigated. The bound-PAG anion resist is shown to achieve higher sensitivity and resolution with smaller LWR than their blended-PAG resist analog. Binding of the PAG anion provides reduced photoacid diffusivity, higher maximum PAG loadings, and more homogeneous PAG distributions that help achieve these three critical resist requirements.en_US
dc.language.isoen_USen_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectBonding processesen_US
dc.subjectDiffusionen_US
dc.subjectPhotoresistsen_US
dc.subjectPolymersen_US
dc.titleEffects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performanceen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameUniversity of North Carolina at Charlotte. Dept. of Chemistryen_US
dc.contributor.corporatenameIntel Corporationen_US
dc.publisher.originalAmerican Vacuum Society
dc.identifier.doi10.1116/1.2801868
dc.embargo.termsnullen_US


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