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dc.contributor.authorDomercq, Benoiten_US
dc.contributor.authorKippelen, Bernarden_US
dc.contributor.authorZhang, Xiaohongen_US
dc.date.accessioned2013-04-03T17:57:52Z
dc.date.available2013-04-03T17:57:52Z
dc.date.issued2007-08
dc.identifier.citationZhang, X.-H. and Domercq, Benoit and Kippelen, Bernard, "High-performance and electrically stable C-60 organic field-effect transistors," Applied Physics Letters, 91, 9, (August 27 2007)en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1853/46620
dc.description© 2007 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.2778472en_US
dc.descriptionDOI: 10.1063/1.2778472en_US
dc.description.abstractElectron mobility ranging from 2.7 to 5.0 cm²/V s was achieved when treating the gate dielectric with divinyltetramethyldisiloxane bis(benzocyclobutene) and depositing C ₆₀ at room temperature. The transistors combine threshold voltages near zero, low subthreshold slopes (<0.7 V/decade), on/off current ratios larger than 10 ⁶, excellent reproducibility, and good electrical stability under prolonged continuous dc bias stress.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectField effect devicesen_US
dc.subjectMolecular electronic devicesen_US
dc.subjectElectron mobilityen_US
dc.subjectElemental semiconductorsen_US
dc.subjectField effect transistorsen_US
dc.subjectFullerene devicesen_US
dc.subjectFullerenesen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectStabilityen_US
dc.subjectStress effectsen_US
dc.subjectThin film transistorsen_US
dc.titleHigh-performance and electrically stable C ₆₀ organic field-effect transistorsen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineeringen_US
dc.publisher.originalAmerican Institute of Physicsen_US
dc.identifier.doi10.1063/1.2778472


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