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dc.contributor.authorKang, Joo H.en_US
dc.contributor.authorda Silva Filho, Demetrio A.en_US
dc.contributor.authorBrédas, Jean-Lucen_US
dc.contributor.authorZhu, X.-Y.en_US
dc.date.accessioned2013-04-10T20:30:27Z
dc.date.available2013-04-10T20:30:27Z
dc.date.issued2005-04
dc.identifier.citationKang, J. H. and da Silva Filho, Demetrio A. and Bredas, Jean-Luc and Zhu, XY, "Shallow trap states in pentacene thin films from molecular sliding," Applied Physics Letters, 86, 15, (April 11 2005)en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1853/46704
dc.description© 2005 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.1900944en_US
dc.descriptionDOI: 10.1063/1.1900944en_US
dc.description.abstractPetacene is one of the most promising organic semiconductors for thin-film transistors. Transport measurements in the past have established the presence of shallow traps but their origins have remained a mystery. Here we show that shallow traps in vapor-deposited crystalline pentacene thin films are due to local defects resulting from the sliding of pentacene molecules along their long molecular axis, while two-dimensional crystalline packing is maintained. Electronic structural calculation confirms that these sliding defects are shallow-charge traps with energies ⩽ 100 meV above (below) the valence band maximum (conduction band minimum).en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectThin film transistorsen_US
dc.subjectDefect statesen_US
dc.subjectElectron trapsen_US
dc.subjectValence bandsen_US
dc.subjectConduction bandsen_US
dc.subjectMolecular electronicsen_US
dc.titleShallow trap states in pentacene thin films from molecular slidingen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Chemistry and Biochemistryen_US
dc.contributor.corporatenameUniversity of Minnesota. Dept. of Chemistryen_US
dc.publisher.originalAmerican Institute of Physicsen_US
dc.identifier.doi10.1063/1.1900944


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