dc.contributor.author | Kang, Joo H. | en_US |
dc.contributor.author | da Silva Filho, Demetrio A. | en_US |
dc.contributor.author | Brédas, Jean-Luc | en_US |
dc.contributor.author | Zhu, X.-Y. | en_US |
dc.date.accessioned | 2013-04-10T20:30:27Z | |
dc.date.available | 2013-04-10T20:30:27Z | |
dc.date.issued | 2005-04 | |
dc.identifier.citation | Kang, J. H. and da Silva Filho, Demetrio A. and Bredas, Jean-Luc and Zhu, XY, "Shallow trap states in pentacene thin films from molecular sliding," Applied Physics Letters, 86, 15, (April 11 2005) | en_US |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/1853/46704 | |
dc.description | © 2005 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.1900944 | en_US |
dc.description | DOI: 10.1063/1.1900944 | en_US |
dc.description.abstract | Petacene is one of the most promising organic semiconductors for thin-film transistors. Transport measurements in the past have established the presence of shallow traps but their origins have remained a mystery. Here we show that shallow traps in vapor-deposited crystalline pentacene thin films are due to local defects resulting from the sliding of pentacene molecules along their long molecular axis, while two-dimensional crystalline packing is maintained. Electronic structural calculation confirms that these sliding defects are shallow-charge traps with energies ⩽ 100 meV above (below) the valence band maximum (conduction band minimum). | en_US |
dc.publisher | Georgia Institute of Technology | en_US |
dc.subject | Organic semiconductors | en_US |
dc.subject | Semiconductor thin films | en_US |
dc.subject | Thin film transistors | en_US |
dc.subject | Defect states | en_US |
dc.subject | Electron traps | en_US |
dc.subject | Valence bands | en_US |
dc.subject | Conduction bands | en_US |
dc.subject | Molecular electronics | en_US |
dc.title | Shallow trap states in pentacene thin films from molecular sliding | en_US |
dc.type | Article | en_US |
dc.contributor.corporatename | Georgia Institute of Technology. Center for Organic Photonics and Electronics | en_US |
dc.contributor.corporatename | Georgia Institute of Technology. School of Chemistry and Biochemistry | en_US |
dc.contributor.corporatename | University of Minnesota. Dept. of Chemistry | en_US |
dc.publisher.original | American Institute of Physics | en_US |
dc.identifier.doi | 10.1063/1.1900944 | |