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dc.contributor.authorMoix, Jeremy M.en_US
dc.contributor.authorHernandez, Rigobertoen_US
dc.date.accessioned2013-04-10T20:30:27Z
dc.date.available2013-04-10T20:30:27Z
dc.date.issued2005-03
dc.identifier.citationMoix, J.M. and Hernandez, Rigoberto, "Dissipating the Langevin equation in the presence of an external stochastic potential," Journal of Chemical Physics, 122, 11, (March 15 2005)en_US
dc.identifier.issn0021-9606
dc.identifier.urihttp://hdl.handle.net/1853/46706
dc.description© 2005 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.1870875en_US
dc.descriptionDOI: 10.1063/1.1870875en_US
dc.description.abstractIn the Langevin formalism, the delicate balance maintained between the fluctuations in the system and their corresponding dissipation may be upset by the presence of a secondary, space-dependent stochastic force, particularly in the low-friction regime. In prior work, the latter was dissipated self-consistently through an additional uniform (mean-field) friction [ T. Shepherd and R. Hernandez, J. Chem. Phys. 115, 2430 (2001). ] An alternative approach to ensure that equipartition is satisfied relies on the use of a space-dependent friction while ignoring nonlocal correlations. The approach is evaluated with respect to its ability to maintain constant temperature for two simple one-dimensional, stochastic potentials of mean force wherein the friction can be evaluated explicitly when there is no memory in the barriers. The use of a space-dependent friction is capable of providing qualitatively similar results to those obtained previously, but in extreme cases deviations from equipartition may be observed due to the neglect of the memory effects present in the stochastic potentials.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectStochastic processesen_US
dc.subjectFluctuationsen_US
dc.subjectFrictionen_US
dc.subjectDifferential equationsen_US
dc.titleDissipating the Langevin equation in the presence of an external stochastic potentialen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Computational Molecular Science and Technologyen_US
dc.publisher.originalAmerican Institute of Physicsen_US
dc.identifier.doi10.1063/1.1870875


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