High-performance InGaZnO thin-film transistors with high-k amorphous Ba₀.₅Sr₀.TiO₃gate insulator
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We report on high-performance n-channel thin-film transistors (TFTs) fabricated using amorphous indium gallium zinc oxide (a-IGZO) and amorphous Ba₀.₅Sr₀.₅TiO₃ (α-BST) as the channel and gate dielectric layers, respectively. a-BST/a-IGZO TFTs achieve low-voltage operation with a high saturation mobility value of 10±1 cm²/V s, excellent subthreshold slopes of 0.06±0.01 V/decade, a low threshold voltage of 0.5±0.1 V, and a high on-off current ratio up to 8×10⁷ (W/L = 1000 μm/5 μm) at 3 V. The high capacitance density of a-BST (145±2 nF/cm²) and the small contact resistance, smaller than the channel resistance, are responsible for the high performance of these TFTs.
- COPE Publications 
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