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dc.contributor.authorKim, Jungbaeen_US
dc.contributor.authorFuentes-Hernandez, Caneken_US
dc.contributor.authorKippelen, Bernarden_US
dc.date.accessioned2013-04-22T20:22:04Z
dc.date.available2013-04-22T20:22:04Z
dc.date.issued2008-12
dc.identifier.citationKim, J.B. and Fuentes-Hernandez, Canek and Kippelen, Bernard, “High performance InGaZnO thin-film transistors with high-k amorphous Ba₀.₅Sr₀.TiO₃gate insulator,” Applied Physics Letters, 93, 242111 (2008)en_US
dc.identifier.citationKim, J. B. and Fuentes-Hernandez, Canek and Kippelen, Bernard, “Erratum: High performance InGaZnO thin-film transistors with high-k amorphous Ba₀.₅Sr₀.TiO₃gate insulator,” Applied Physics Letters, Applied Physics Letters, 94, 119901 (2009)en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1853/46824
dc.description© 2008 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3054335en_US
dc.descriptionDOI: 10.1063/1.3054335; 10.1063/1.3106227 (erratum)en_US
dc.descriptionErratum: We mistakenly reported on thin-film transistors having a subthreshold slope of 0.06 0.01 V/ decade. The corrected value for the average and standard deviation of the subthreshold slope in these transistors should read 0.11 0.02 V/ decade.en_US
dc.description.abstractWe report on high-performance n-channel thin-film transistors (TFTs) fabricated using amorphous indium gallium zinc oxide (a-IGZO) and amorphous Ba₀.₅Sr₀.₅TiO₃ (α-BST) as the channel and gate dielectric layers, respectively. a-BST/a-IGZO TFTs achieve low-voltage operation with a high saturation mobility value of 10±1 cm²/V s, excellent subthreshold slopes of 0.06±0.01 V/decade, a low threshold voltage of 0.5±0.1 V, and a high on-off current ratio up to 8×10⁷ (W/L = 1000 μm/5 μm) at 3 V. The high capacitance density of a-BST (145±2 nF/cm²) and the small contact resistance, smaller than the channel resistance, are responsible for the high performance of these TFTs.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectAmorphous semiconductorsen_US
dc.subjectBarium compoundsen_US
dc.subjectCapacitanceen_US
dc.subjectContact resistanceen_US
dc.subjectDielectric thin filmsen_US
dc.subjectGallium compoundsen_US
dc.subjectIndium compoundsen_US
dc.subjectStrontium compoundsen_US
dc.subjectTernary semiconductorsen_US
dc.subjectThin film transistorsen_US
dc.subjectZinc compoundsen_US
dc.titleHigh-performance InGaZnO thin-film transistors with high-k amorphous Ba₀.₅Sr₀.TiO₃gate insulatoren_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineeringen_US
dc.publisher.originalAmerican Institute of Physicsen_US
dc.identifier.doi10.1063/1.3054335
dc.identifier.doi10.1063/1.3106227


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