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dc.contributor.authorSharma, Ashaen_US
dc.contributor.authorHaldi, Andreasen_US
dc.contributor.authorHotchkiss, Peter J.en_US
dc.contributor.authorMarder, Seth R.en_US
dc.contributor.authorKippelen, Bernarden_US
dc.date.accessioned2013-04-30T20:28:38Z
dc.date.available2013-04-30T20:28:38Z
dc.date.issued2009
dc.identifier.citationAsha Sharma, Andreas Haldi, Peter J. Hotchkiss, Seth. R. Marder, and Bernard Kippelen, "Effect of phosphonic acid surface modifiers on the work function of indium tin oxide and on the charge injection barrier into organic single-layer diodes," Journal of Applied Physics, 105, 7, 074511 (2009)en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1853/46871
dc.description© 2009 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3095490en_US
dc.descriptionDOI: 10.1063/1.3095490en_US
dc.description.abstractWe investigate the use of several phosphonic acid surface modifiers in order to increase the indium tin oxide (ITO) work function in the range of 4.90–5.40 eV. Single-layer diodes consisting of ITO/modifier/N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′ biphenyl-4,4″ diamine (α-NPD)/Al and ITO/modifier/pentacene/Al were fabricated to see the influence of the modified ITO substrates with different work functions on the charge injection. To calculate the charge injection barrier with different surface modifiers, the experimentally measured current density-voltage (J-V) characteristics at different temperatures are fitted using an equivalent circuit model that assumes thermionic emission across the barrier between the ITO work function and the highest occupied molecular orbital of the organic material. The charge injection barrier height extracted from the model for various surface modifier-based diodes is independent of the ITO work function within the range of changes achieved through modifiers for both α-NPD and pentacene-based single-layer diodes.en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectAluminiumen_US
dc.subjectCharge injectionen_US
dc.subjectIndium compoundsen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectSemiconductor diodesen_US
dc.subjectThermionic emissionen_US
dc.subjectWork functionen_US
dc.titleEffect of phosphonic acid surface modifiers on the work function of indium tin oxide and on the charge injection barrier into organic single-layer diodesen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineeringen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Chemistry and Biochemistryen_US
dc.publisher.originalAmerican Institute of Physicsen_US
dc.identifier.doi10.1063/1.3095490


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