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dc.contributor.authorTiwari, Shree Prakashen_US
dc.contributor.authorZhang, Xiaohongen_US
dc.contributor.authorPotscavage, William J., Jr.en_US
dc.contributor.authorKippelen, Bernarden_US
dc.date.accessioned2013-05-06T20:21:13Z
dc.date.available2013-05-06T20:21:13Z
dc.date.issued2009-12
dc.identifier.citationTiwari, Shree Prakash and Zhang, Xiao-Hong and Potscavage, Jr., William J. and Kippelen, Bernard, "Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition," Applied Physics Letters, 95, 22, (November 30 2009)en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1853/46879
dc.description© 2009 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3269579en_US
dc.descriptionDOI: 10.1063/1.3269579en_US
dc.description.abstractHigh performance solution-processed n-channel organic field-effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with low operating voltages (3 V) are demonstrated using a high-k hafnium dioxide gate dielectric grown by atomic layer deposition. Devices exhibit excellent n-channel performance with electron mobility values up to 0.14 cm²/V s, threshold voltages of ∼ 0.3 V, current on/off ratios >10⁵, and very low values of subthreshold slope ( ∼ 140 mV/decade).en_US
dc.publisherGeorgia Institute of Technologyen_US
dc.subjectAtomic layer depositionen_US
dc.subjectContact resistanceen_US
dc.subjectElectron mobilityen_US
dc.subjectHafnium compoundsen_US
dc.subjectHigh-k dielectric thin filmsen_US
dc.subjectOrganic field effect transistorsen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectSemiconductor-insulator boundariesen_US
dc.titleLow-voltage solution-processed n-channel organic field-effect transistors with high-k HfO₂ gate dielectrics grown by atomic layer depositionen_US
dc.typeArticleen_US
dc.contributor.corporatenameGeorgia Institute of Technology. Center for Organic Photonics and Electronicsen_US
dc.contributor.corporatenameGeorgia Institute of Technology. School of Electrical and Computer Engineeringen_US
dc.publisher.originalAmerican Institute of Physicsen_US
dc.identifier.doi10.1063/1.3269579


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