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    Low-voltage pentacene organic field-effect transistors with high-kappa HfO₂ gate dielectrics and high stability under bias stress

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    COPE_105.pdf (523.6Kb)
    Date
    2009-12
    Author
    Zhang, Xiaohong
    Tiwari, Shree Prakash
    Kim, Sung-Jin
    Kippelen, Bernard
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    Abstract
    Low-voltage pentacene organic field-effect transistors are demonstrated (operating voltage of −3 V) with high-κ hafnium dioxide gate dielectrics grown by atomic layer deposition at 200 °C. A high hole mobility of 0.39 cm²/V s with low threshold voltage (<−0.5 V) and low subthreshold slope of 120 mV/dec is achieved with a HfO₂ dielectric layer modified with a phosphonic acid based treatment. A high value of 94.8 nF/V s is obtained for the product of mobility and capacitance density. The devices show excellent bias stress stability with or without the phosphonic acid at the HfO₂ gate dielectric surface.
    URI
    http://hdl.handle.net/1853/46880
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